Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

“…Based on the matured epitaxial techniques, the studied device structure is easily designed and grown. It can exhibit good hydrogen-sensing performance as compared with the previous device with a high-quality oxide as a cap layer [10,11]. The comprehensive analysis of sensing performances from different aspects is presented in this study.…”

“…Nevertheless, the III-V compound semiconductor-type Schottky diodes show some benefits including higher detection sensitivity, shorter response time, and higher operating temperature limit due to their wider bandgaps. For example, various semiconductor materials, such as GaAs [5,6] InP [7,8], AlGaAs [9,10] and InGaP [11], have been applied to detection of hydrogen or other gas for a long time. However, the smaller magnitude of current variation and larger disturbance by surrounding noises are found.…”

Characterisation and stabilisation of Pt/TaSi /SiO2/SiC gas sensor

“…Probably the reason for this behaviour is the fact mentioned in the section on structural and chemical analysis: the total transformation of the Pt into either Pt 2 Ta with the annealing. It is supposed, like in other types of sensors [21,22] that the metallic Pt is required to catalytically dissociate the incoming species, Fig. 8.…”

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

“…[1][2][3][4][5]. Previous studies created the thin, high-quality insulator layer between the metal and semiconductor that is used to create a metal-oxide-semiconductor (MOS) structure, which was an important factor for the high-performance of MOS devices [6][7][8][9][10]. Researchers investigated the contact of MOS layers via various approaches, e.g., Al/HfO 2 /p-Si [7], Pt/oxide/n-InGaP [10], Pt/SiO 2 /n-InGaN [11], Pd/NiO/GaN [12], Au/SiO 2 /n-GaN [13], Au/SnO x /n-LTPS/glass [14], Pt/SiO 2 /n-GaN [6,15], Pt/Oxide/Al 0.3 Ga 0.7 As [16], Pd/HfO 2 /GaN [17], and Al/SnO 2 /p-Si (111) [18].…”