Characterisation and stabilisation of Pt/TaSi /SiO2/SiC gas sensor

SiC-based MIS gas sensor for high water vapor environments

“…The Ni layer forms an ohmic contact [24,25] with the heavily doped substrate and the Pt coating protected the Ni layer from the hazardous environment. A detailed description of this fabrication process has been published elsewhere [26]. After their fabrication the devices were annealing for some hours in an alternating reducing and oxidizing atmospheres at temperatures above 600 • C in order to obtain a suitable porosity of the gate layer [27] and stabilize the electrical behavior of the devices at high temperatures.…”

“…After their fabrication the devices were annealing for some hours in an alternating reducing and oxidizing atmospheres at temperatures above 600 • C in order to obtain a suitable porosity of the gate layer [27] and stabilize the electrical behavior of the devices at high temperatures. This post-fabrication treatment not only transforms physically the metallic gate layer but yields to an oxidation of the deposited TaSi x layer to Ta 2 O 5 and several tantalum sub-oxides and a small quantity of SiO x [26] that obviously result in different electrical characteristics with respect those of the as-fabricated devices. The final layer structure of the MIS capacitors is schematized in Fig.…”

1.1.4 SiC-based MIS gas sensor for CO detection in very high water vapor environments

“…) grown on heavily doped substrate (0.021Ω) purchased from CREE Inc. A detailed description of the fabrication process can be found elsewhere [7,11]. After their fabrication, the devices were annealed in alternating reducing and oxidizing atmospheres at temperatures above 600ºC for at least 2 hours in order to obtain a porous gate layer with stable electrical properties [3].…”

Morphology Evolution of Nanoscale-Thick Au/Pd Bimetallic Films on Silicon Carbide Substrate

“…In these applications, SiC's characteristic properties, such as a high melting temperature, high thermal conductivity, high Young modulus, wide energy band gap, and chemical stability are fully exploited [1][2][3]. In particular, metal/SiC Schottky diodes are used in the fabrication of different devices, ranging from high-temperature and -power electronics to very sensitive high-temperature hydrogen and hydrocarbon gas detectors and biosensors (due to SiC's biocompatibility properties) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. So, in the last few decades, to meet specific technological requirements, various methodologies were exploited for the fabrication of metal/SiC diodes.…”