Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

Hung, Ching‐Wen; Lin, Hsien-Chang; Chen, Huey Ing; Tsai, Yi Ju; Lai, Po Hsien; Fu, Shengli; Chuang, Hung-Ming; Liu, Wen Chau

doi:10.1016/j.snb.2006.05.007

Cited by 30 publications

(10 citation statements)

References 24 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The activation energy E a of the studied device is as low as 2.88 kJ mol −1 . The E a value in this work is much lower than that of GaAs HEMT-type hydrogen sensor of Hung et al [31]. The reason for the lower activation energy of the studied device is not completely understood.…”

Section: Resultscontrasting

confidence: 60%

See 1 more Smart Citation

On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Tsai

Chen

Lin

et al. 2009

Sensors and Actuators B: Chemical

Self Cite

View full text Add to dashboard Cite

Section: Resultscontrasting

confidence: 60%

“…(6). The detailed derivation of the pressure dependent rate constant k r is shown in previous reports [31]. The calculated k r values are summarized in Table 1.…”

Section: Resultsmentioning

confidence: 99%

On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Tsai

Chen

Lin

et al. 2009

Sensors and Actuators B: Chemical

Self Cite

View full text Add to dashboard Cite

“…7 the experimental results, it is observed that the I DS increase as with the increase of V DS in the linear region (V DS ≤ 5 V). This is due to the modulation of channel conductance (g D = ∂I D /∂V DS ) [40].…”

Section: Rqep (Min)mentioning

confidence: 99%

Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

Chen

Liu

et al. 2015

Sensors and Actuators B: Chemical

Self Cite

View full text Add to dashboard Cite

“…However, MOS sensors suffer from drawbacks such as premature saturation of detectable hydrogen concentrations and low sensitivity. Other MOS-based devices have been used as hydrogen sensors, such as MOS field-effect transistors (FETs) 6,7 , high electron mobility transistors [8][9][10] , and Schottky diode-type FETs 11,12 . However, these devices require complicated fabrication processes and have high production costs.…”

Section: Introductionmentioning

confidence: 99%

Realization of palladium-based optomechanical cantilever hydrogen sensor

McKeown

Wang

et al. 2017

Microsyst Nanoeng

View full text Add to dashboard Cite

Hydrogen has attracted attention as an alternative fuel source and as an energy storage medium. However, the flammability of hydrogen at low concentrations makes it a safety concern. Thus, gas concentration measurements are a vital safety issue. Here we present the experimental realization of a palladium thin film cantilever optomechanical hydrogen gas sensor. We measured the instantaneous shape of the cantilever to nanometer-level accuracy using diffraction phase microscopy. Thus, we were able to quantify changes in the curvature of the cantilever as a function of hydrogen concentration and observed that the sensor's minimum detection limit was well below the 250 p.p.m. limit of our test equipment. Using the change in curvature versus the hydrogen curve for calibration, we accurately determined the hydrogen concentrations for a random sequence of exposures. In addition, we calculated the change in film stress as a function of hydrogen concentration and observed a greater sensitivity at lower concentrations.Keywords: hydrogen detection; imaging and sensing; interference microscopy; optomechanics; optical sensors; surface dynamics INTRODUCTIONHydrogen has always been viewed as a promising alternative to fossil fuels, and it can also function as an effective energy storage medium for intermittent energy sources. In addition, hydrogen is used in a range of other industries, including chemical production, metal refining, and food processing. A major safety concern with hydrogen is combustibility. Therefore, early leak detection and concentration determination of hydrogen have been areas of intense research 1-3 . There are various types of hydrogen sensors that use a wide range of detection mechanisms. Lundström et al. 4 proposed metal oxide semiconductor (MOS)-type hydrogen sensors 5 . However, MOS sensors suffer from drawbacks such as premature saturation of detectable hydrogen concentrations and low sensitivity. Other MOS-based devices have been used as hydrogen sensors, such as MOS field-effect transistors (FETs) 6,7 , high electron mobility transistors [8][9][10] , and Schottky diode-type FETs 11,12 . However, these devices require complicated fabrication processes and have high production costs. Optical gas sensors 13-21 not only overcome these disadvantages but also have other unique advantages, such as negligible electrical interference, no risk of ignition from an electrical spark, and the ability to work at high temperatures or in harsh environments.Palladium (Pd) can absorb up to 900 times its own weight in hydrogen gas at room temperature 22 . Compared with platinum 23 , Pd film is more popular because of its lower cost. Pd alloys with Ag, Au, Ni, and WO 3 have also been studied 24-29 because of their improved response time 24,25,27 , sensitivity 28,29 , and durability 26 as a sensing material. The alloys can avoid blistering effects 26 and the α to β phase transition at higher hydrogen concentrations 25,27 .

show abstract

Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

Cited by 30 publications

References 24 publications

On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

Realization of palladium-based optomechanical cantilever hydrogen sensor

Contact Info

Product

Resources

About