A new international standard proposal (IEC 62433-2 Edition 2.0) is in progress. The main purpose of the standard is to provide an Integrated Circuit Emission Model -Conducted Emission (ICEM-CE) along with a data exchange format. It is known that the existing ICEM-CE information is closely linked to the supplier of the model or simulation software used to generate the model information, rendering extremely difficult its exchange between suppliers, customers, EDA tool vendors, academics, etc. This paper describes a universal exchange format for ICEM-CE. The format is based on the well-known eXtensible Markup Language format, which is both machine and human readable. As an illustrative example, it is applied on an Atmega88 microcontroller: the model is extracted by the manufacturer, Atmel, and is exchanged with an academic partner, INSA, and an industrial partner, Valeo. The exchange proves fruitful and the model was easily deployable to predict conducted emission noise.
Near-field scan techniques have considerably evolved over recent years and will no doubt continue to do so in the future. Standardisation of these measurement techniques ensures stable reproducibility and provides guideline for those who are new to the field. The state of the art is summarised and the evolution of applicable standards is described.
Nowadays, the obsolescence of an electronic component is solved by trial and error approach: the component is changed by another equivalent one and EMC requirement is checked. Integrated Circuit obsolescence is an economic constraint for electronic suppliers.In order to consider the obsolescence on electronic components, it is necessary to establish a methodology aiming to guarantee the non-regression of EMC performances of equipment during an immunity test.We propose a new methodology to predict immunity of component during the electronic board design. The component model developed is based on EMC measurement.The authors compare measurements with simulations using the proposed model and demonstrate the validity of this approach.
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