Electrical behavior of commercial off-the-shelf normally-off GaN power transistors under heavy ion irradiation is presented based on technology computer aided design numerical simulation in order to better understand the mechanism of single event effects (SEEs) in these devices. First, the worst case has been defined from the single event transient mechanism. Then, the decrease in the electric field observed after irradiation and the traps effect have been addressed. Finally, possible mechanisms of SEE in these devices under heavy ion are proposed.

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No abstract

EMC of integrated circuits represents a major constraint for the qualification of electronic circuits. Today, there are existing standardized models such as ICEM-CE that allows the prediction of conducted emission generated by an IC at a PCB level. However, the EMC levels may change after a certain period of operation due to the aging of components. On the other hand, no existing model or tool can predict the long-term EMC levels. This paper presents a new methodology for modeling of integrated circuits in order to construct an EMC model which takes into account the aging based on a new reliability model called M-STORM.

No abstract

This paper describes a methodology to build a combined conducted and radiated emission model for integrated circuits. The development of emission models of a FPGA extracted from two different approaches is presented and discussed. The first approach allows to build a predictable model from FPGA implementation and some passive measurement on FPGA device. The second approach allows to build a model from only the near field measurement. In conclusion, the accuracy of both models as well as the advantages and disadvantages are discussed.

No abstract

This paper proposes a methodology to model an electronic board according to a bottom-up approach. This method is applied to build the model of a synchronous buck DC-DC converter board for conducted emission prediction purpose. The different steps to select the model terminals and the construction of the component and PCB interconnect models are described.