Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs

Chihani, Omar; Théolier, Loïc; Delétage, Jean-Yves; Woirgard, Eric; Bensoussan, Alain; Durier, A.

doi:10.1109/irps.2018.8353685

Cited by 9 publications

(6 citation statements)

References 8 publications

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“…These qualifying experiments can take thousands of hours [34]- [36]. Under HTRB stress, a positive shift has been reported in the onresistance (RDS,ON) and threshold voltage (V TH ), but the changes do not reach a failed state [37]- [39]. In more accelerated HTRB experiments (where the drain voltage is higher than the rated voltage), the V TH instability in some early GaN HEMTs has shown up to a 50% increase, which is above the notional 20% shift failure boundary but recoverable [40].…”

Section: A High Temperature Reverse Biasmentioning

confidence: 99%

“…HTGB experiments apply a high, static bias onto the gate terminal of the GaN device. Similar tests with a static bias and step-stress processes have been used to determine the gate voltage rating of GaN HEMTs [37], [44]- [47], which will be further discussed in Section VI.…”

Section: B High Temperature Gate Biasmentioning

confidence: 99%

“…HTGB experiments have also shown to cause shifting in VTH and R DS,ON [37], [43], [44] due to trapped charges in the gate stack. The type of contact formed on p-GaN, either Schottky or Ohmic, would impact these drifts [48].…”

Section: B High Temperature Gate Biasmentioning

confidence: 99%

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: A High Temperature Reverse Biasmentioning

confidence: 99%

Section: B High Temperature Gate Biasmentioning

confidence: 99%

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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“…To ensure the safe operation of the power device, the negative V TH drop must be improved. High-temperature gate bias (HTGB) is one of the most suitable methods for assessing device reliability at high temperatures [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

et al. 2023

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In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact resistance of about 0.6 Ω-mm after annealing at 550 °C. In addition, the threshold voltage shifting of the device was reduced from −0.85 V to −0.74 V after applying a high gate bias stress at 150 °C for 10−2 s. The measured time to failure (TTF) of the device shows that a low thermal budget process can improve the device’s reliability. A 100-fold improvement in HTGB TTF was clearly demonstrated. The study shows a viable method for CMOS-compatible GaN power device fabrication.

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“…In the literature, several studies on the temperature dependency of GaN HEMTs were performed. References [8] and [9] indicate the evolution of GaN HEMTs electrical parameters during thermal stresses depending on the different temperature ranges.…”

Section: Introductionmentioning

confidence: 99%

Temperature Effects of GaN HEMTs on the Design of Power Converters

Bouchour

Dherbécourt

Latry³

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.

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Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs

Cited by 9 publications

References 8 publications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

Temperature Effects of GaN HEMTs on the Design of Power Converters

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