No abstract

Effects of substrate temperature and near-substrate plasma density on the properties of dc magnetron sputtered aluminum doped zinc oxide J. Appl. Phys. 94, 5514 (2003); 10.1063/1.1615694 Erratum: "Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by rf magnetron sputtering" [J.

No abstract

No abstract

No abstract

Indium-doped zinc oxide (IZO) films were prepared by the spray pyrolysis technique. The effect of gradual incorporation of indium cations on the structural, electrical, and compositional properties of IZO films was studied in detail. It was observed that even a small addition of indium modifies the preferred growth of IZO film from the [002] direction to the [101] direction. Such a modification in growth pattern is a result of more nucleating centers created by indium doping. Indium dopant improves the electrical properties of the films. The carrier concentration depends mainly on the indium dopant level while the mobility is affected by the changes in crystal orientation that take place due to addition of dopants. X-ray photoelectron spectroscopy results show that indium doping does not lead to any stoichiometric changes in the IZO films and the dopant incorporation in the film is linearly proportional to that in the solution.

In order to probe into the growth mechanism of sprayed SnO2 films, the films were deposited with different Sn concentrations in the precursor solution. The orientational properties were determined using grazing incidence x-ray diffraction. The preferred growth changed from [110] to [200] direction as the Sn incorporation was increased. Such a change in growth can be anticipated from structure factor calculations. The compositional analysis was done using x-ray photoelectron spectroscopy. The Hall effect measurements indicated that the carrier concentration and mobility are sensitively dependent on the orientation and composition of the films.

No abstract