Effect of heavy doping in SnO2:F films

Agashe, Chitra; Major, S.S.

doi:10.1007/bf00356009

Cited by 84 publications

(59 citation statements)

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“…These values are inconsistent with a model in which F dopants initially fill oxygen vacancies, replacing those double donors by F single donors and thereby reducing n o . 13 For each F ion in this sample, there are an additional 60 free electrons compared with the undoped SnO 2 . Thus, the very process of F doping in SPEED is introducing electrically active defects far above the actual number of dopant impurities.…”

Section: Discussionmentioning

confidence: 99%

“…11,12 Fluorine dopants are initially expected to fill oxygen vacancies, which relieves the surrounding lattice distortion. 13 Thus, low-level fluorine doping may actually decrease freeelectron density because two free electrons of the vacancy are reduced to one, due to the reception of the other electron by the fluorine to complete the bond. At higher concentrations, F may replace O in the lattice, causing an increase in the carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

“…The highest fluorine concentrations may include interstitial fluorine, which is an electron acceptorthat would decrease the free-electron density, as has been observed. [13][14][15] In any case, the electron concentration might be a complicated function of fluorine dopant concentration that depends on the conditions of growth and doping. SPP properties depend on the frequency-dependent complex permittivity, which depends not only on carrier concentration but also on relaxation time (in the Drude model) and on other loss processes in general.…”

Section: Introductionmentioning

confidence: 99%

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Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

et al. 2017

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Abstract. Electrodynamic properties of fluorine-doped tin oxide films grown by aqueous-spray-based heterogeneous reaction on heated hydrophilic substrates were investigated with emphasis on applications to infrared plasmonics. These properties were correlated with physical ones such as crystallinity, dopant and electron concentrations, conductivity, and mobility. The degree of crystallinity for the nanocrystalline films increases with F concentration and growth temperature. The F concentration in the films is proportional to that in the starting solution. Electron concentration and Hall mobility rise more slowly with F concentration. At their highest, both F and electron concentrations are ∼2% of the Sn concentration. In more lightly doped films, the electron concentration significantly exceeds the F concentration. The achieved resistivity of the doped films is lower than for undoped SnO 2 film by 20 to 750 times. The infrared complex permittivity spectrum shows a shift in plasma wavelength from 15 to 2 μm with more than two orders increase in F concentration. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

et al. 2017

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“…In the case of FTO, a decrease in conductivity, however, has been reported for high fluorine contents, which was assumed to be due to the occurrence of fluorine interstitial acceptors. 14,15 On the other hand, anomalies in electrical conductivity measurements of pure and slightly acceptor-doped SnO 2 samples as a function of oxygen partial pressure and dilatation measurements 16 hint to the presence of cation vacancies at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Ágoston

Körber

Klein

et al. 2010

Journal of Applied Physics

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The intrinsic n-type doping limits of tin oxide ͑SnO 2 ͒ and indium oxide ͑In 2 O 3 ͒ are predicted on the basis of formation energies calculated by the density-functional theory using the hybrid-functional methodology. The results show that SnO 2 allows for a higher n-type doping level than In 2 O 3 . While n-type doping is intrinsically limited by compensating acceptor defects in In 2 O 3 , the experimentally measured lower conductivities in SnO 2 -related materials are not a result of intrinsic limits. Our results suggest that by using appropriate dopants in SnO 2 higher conductivities similar to In 2 O 3 should be attainable.

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“…The law of mass action of these equations suggests that the externally added dopant increases the rate of backward reaction through the fourth power dependence of HF concentration. Hence, HF will determine the rate of deposition of the SnO 2 films by the competition between the rate of formation of SnO 2 and the rate of etching of SnO 2 (4). Since HF is a product from the doping NH 4 F. Thus, the deposition rate can be correlation to the amount of dopant.…”

Section: Results and Discusssionmentioning

confidence: 99%

Growth and Characterization of Co-Doped Fluorine and Antimony in Tin Oxide Thin Films Obtained by Ultrasonic Spray Pyrolysis

Gaewdang

Wongcharoen

2007

JMMP

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Fluorine (F)-doped, antimony (Sb)-doped, fluorine and antimony co-doped tin oxide (SnO 2 ) thin films were prepared by ultrasonic spray pyrolysis technique using SnCl 2 , NH 4 F and SbCl 3 as precursors of Sn, F and Sb elements respectively. F and Sb doping concentrations carried out from 1 to 20 wt% and 1 to 4 wt% in F-doped and Sb-doped SnO 2 films respectively. In F and Sb co-doped SnO 2 films, the proportions of F and Sb to Sn in starting solution were 15 and 2 wt% respectively. XRD patterns showed that the preferred orientation of SnO 2 :F, SnO 2 :Sb and SnO 2 :F,Sb is dependent on the doping concentration. The variation of doping concentration and preferred orientation of the films was reflected in their morphology as investigated by SEM. The electrical properties of the films were performed by Hall effect measurements in van der Pauw configuration. The minimum resistivity values of SnO 2 :F and SnO 2 :Sb were found in the films doped with 15 wt% of F and 2 wt% of Sb. However, The minimum of resistivity value of F and Sb co-doped SnO 2 films is not better than neither the one of F-doped nor the one of Sb-doped SnO 2 films. The optical transmission of SnO 2 :F films was found to increase with increasing in F doping concentration. Whereas the optical transmission of SnO 2 :Sb was found to decrease with increasing in Sb concentration. The F and Sb co-doped SnO 2 films annealed in three different conditions at 500 °C show the lower transmission values than the value obtained in the as-prepared SnO 2 :F,Sb films.

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Effect of heavy doping in SnO2:F films

Cited by 84 publications

References 8 publications

Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Growth and Characterization of Co-Doped Fluorine and Antimony in Tin Oxide Thin Films Obtained by Ultrasonic Spray Pyrolysis

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Effect of heavy doping in SnO2:F films

Cited by 84 publications

References 8 publications

Electrodynamic properties of aqueous spray-deposited SnO2:F films for infrared plasmonics

Electrodynamic properties of aqueous spray-deposited SnO2:F films for infrared plasmonics

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Growth and Characterization of Co-Doped Fluorine and Antimony in Tin Oxide Thin Films Obtained by Ultrasonic Spray Pyrolysis

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Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics