Secondary lymphedema is associated with impaired lymph fluid drainage and remains incurable. Alternatively, cell‐based therapy may pave the way for lymphedema treatment. We found 11 animal and seven human studies had been conducted from 2008 to 2018. Most studies showed great potential for this treatment modality. Emerging studies have focused on novel techniques, such as coupling cell therapy with lymph node transfer, or adding growth factors to cell therapy.
This paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type metal-oxide-semiconductor field effect transistors. It was found that the behavior of GIDL current during CHCS is dependent upon the interfacial layer (IL) oxide thickness of high-k/metal-gate stacks. For a thinner IL, the GIDL current gradually decreases during CHCS, a result contrary to that found in a device with thicker IL. Based on the variation of GIDL current at different stress conditions, the trap-assisted band-to-band hole injection model is proposed to explain the different behavior of GIDL current for different IL thicknesses.
This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on-insulator p-type MOSFETs. The experimental results indicate that GIFBE causes a reduction in the electrical oxide field, leading to an underestimate of negative-bias temperature instability degradation. This can be partially attributed to the electrons tunneling from the process-induced partial n + polygate. However, based on different operation conditions, we found that the dominant origin of electrons was strongly dependent on holes in the inversion layer under source/drain grounding. This suggests that the mechanism of GIFBE at higher voltages is dominated by the proposed anode electron injection model, rather than the electron valence band tunneling widely accepted as the mechanism for n-MOSFETs.
Index Terms-EVB tunneling, gate-induced floating-body effect (GIFBE), negative-bias temperature instability (NBTI), silicon-on-insulator (SOI).
This letter investigates the impact of mechanical strain on gate-induced floating-body effect in partially depleted silicon-on-insulator p-channel metal-oxide-semiconductor fieldeffect transistors. The strained FB device has less NBTI degradation than unstrained devices. This behavior can be attributed to the fact that more electron accumulation induced by strain effect reduces the electric oxide field significantly during NBTI stress. Analysis of the body current (I B ) under source/drain grounded and floating operation indicates an increase in the anode electron injection and electron tunneling from conduction band which occur at the partial n + poly-Si gate and Si substrate, respectively. This phenomenon can be attributed to the bandgap narrowing which has been induced by the strain effect. Index Terms-Gate-induced floating-body effect (GIFBE), negative bias temperature instability (NBTI), silicon-on-insulator (SOI) MOSFETs, strained silicon.
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