Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

Applied Physics Letters

et al. 2014

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This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (Vt) shifts positively during fast I-V double sweep measurement. However, in I/O devices, Vt shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1−xO2 as gate oxide, can reduce the charge/discharge effect.

mentioning

confidence: 99%

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

Applied Physics Letters

et al. 2014

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“…The double-layer Cu/Mo (500/20 nm) gate electrode films were deposited and then patterned via photolithography on a glass substrate. Then 300-nm-thick Si 3 deposition (PECVD). An active layer of 30-nm-thick a-IGZO film was deposited by DC magnetron sputtering using a target of In 2 O 3 :Ga 2 O 3 :ZnO ¼ 1:1:1 in atomic ratio at room temperature, and then patterned.…”

Section: Methodsmentioning

confidence: 99%

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Liu

Journal of Applied Physics

Chou

et al. 2014

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This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast ID-VG and modulated peak/base pulse time ID-VD measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

“…3(d), from V g ¼ À1.18 to V g ¼ À1. 3. In addition, in the V g < V t ¼ 0.9 V situation, Frenkel-Poole current transfers to tunneling current with V g increasing.…”

mentioning

confidence: 91%

Analysis of an anomalous hump in gate current after dynamic negative bias stress in Hf_xZr_1-xO₂/metal gate p-channel metal-oxide-semiconductor field-effect transistors

et al. 2012

Appl. Phys. Lett.

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Articles you may be interested inInvestigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metaloxide-semiconductor field-effect transistors with HfO2/metal gate stacks Appl. Phys. Lett. 102, 012106 (2013); 10.1063/1.4773914 Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 102, 012103 (2013); 10.1063/1.4773479 Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxidesemiconductor field-effect transistors Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant Appl. Phys. Lett. 96, 142110 (2010); 10.1063/1.3384999 Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with Hf Si O N Si O 2 gate stackThis letter investigates a hump in gate current after dynamic negative bias stress (NBS) in Hf x Zr 1-x O 2 /metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula E high-k e high-k ¼ Q þ E sio2 e sio2 . V C 2012 American Institute of Physics. [http://dx.