Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Dai, Chih-Hao; Chang, Ting‐Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, T.H.; Lo, Wen-Hung; Chen, Ching-En; Shih, Ju-Yin; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung

doi:10.1063/1.3608241

Cited by 35 publications

(18 citation statements)

References 10 publications

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“…Hot carriers and ablation of material are two main factors that could cause dysfunction in a CCD. The former could bring soft breakdown or hard breakdown to the oxide in the metal-oxide semiconductor (MOS) structures [9], while the latter destroys the materials of which the CCD is made [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation

et al. 2013

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A femtosecond laser provides an ideal source to investigate the laser-induced damage of a charge-coupled device (CCD) owing to its thermal-free and localized damage properties. For conventional damage mechanisms in the nanosecond laser regime, a leakage current and degradation of a point spread function or modulation transfer function of the CCD are caused by the thermal damages to the oxide and adjacent electrodes. However, the damage mechanisms are quite different for a femtosecond laser. In this paper, an area CCD was subjected to Ti: sapphire laser irradiation at 800 nm by 100 fs single pulses. Electric-induced oxide breakdown is considered to be the primary mechanism to cause a leakage current, and the injured oxide is between the gate and source in the metal-oxide semiconductor field-effect transistor (MOSFET) structure for one CCD pixel. Optical microscopy and scanning electron microscopy are used to investigate the damaged areas and the results show that the electrodes and the oxide underneath are not directly affected by the femtosecond laser, which helps to get rid of the conventional damage mechanisms. For the primary damage mechanism, direct damage by hot carriers, anode hole injection, and an enlarged electric field in the insulating layer are three possible ways to cause oxide breakdown. The leakage current is proved by the decrease of the resistance of electrodes to the substrate. The output saturated images and the dynamics of an area CCD indicate that the leakage current is from an electrode to a light sensing area (or gate to source for a MOSFET), which proves the oxide breakdown mechanism.

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Section: Introductionmentioning

confidence: 99%

Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation

et al. 2013

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“…With the demand of multi-functional electronic devices increasing greatly in the world, the investigation of device physics will be important for IC industry [1]. Furthermore, the multi-functional portable electronic products should integrate with memory , display , logic devices [50][51][52][53][54][55][56][57], and functional devices (e.g. sensor) [58,59] according to device physics and fabrication technology.…”

Section: Introductionmentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO 2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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“…However, most of the studies were concentrated on nMOSFETs. [11][12][13][14] The degradation due to hot carrier effect in p-MOSFETs with high-k/metal gate stacks has not received as much attention. Therefore, the aim of this letter is to investigate the effects of channel hot carrier stress (CHCS) on HfO 2 /TiN p-MOSFETs.…”

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confidence: 99%

Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Chang

Tsai

et al. 2012

Applied Physics Letters

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Articles you may be interested inInvestigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement Appl. Phys. Lett. 104, 113503 (2014); 10.1063/1.4868532 Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxidesemiconductor field-effect-transistors Appl. Phys. Lett. 103, 022106 (2013); 10.1063/1.4811784 Hot-carrier charge trapping and trap generation in HfO 2 and Al 2 O 3 field-effect transistors

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Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Cited by 35 publications

References 10 publications

Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation

Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation

Physical and chemical mechanisms in oxide-based resistance random access memory

Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

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