Caesium lead halide perovskites were recently demonstrated to be a relevant class of semiconductors for photonics and optoelectronics. Unlike CsPbBr3 and CsPbI3, the realization of high-quality thin films of CsPbCl3, particularly interesting for highly efficient white LEDs when coupled to converting phosphors, is still a very demanding task. In this work we report the first successful deposition of nanocrystalline CsPbCl3 thin films (70–150 nm) by radio frequency magnetron sputtering on large-area substrates. We present a detailed investigation of the optical properties by high resolution photoluminescence (PL) spectroscopy, resolved in time and space in the range 10–300 K, providing quantitative information concerning carriers and excitons recombination dynamics. The PL is characterized by a limited inhomogeneous broadening (~15 meV at 10 K) and its origin is discussed from detailed analysis with investigations at the micro-scale. The samples, obtained without any post-growth treatment, show a homogeneous PL emission in spectrum and intensity on large sample areas (several cm2). Temperature dependent and time-resolved PL spectra elucidate the role of carrier trapping in determining the PL quenching up to room temperature. Our results open the route for the realization of large-area inorganic halide perovskite films for photonic and optoelectronic devices.

All-dielectric sub-micrometric particles have been successfully exploited for light management in a plethora of applications at visible and near-infrared frequencies. However, the investigation of the intricacies of the Mie resonances at the sub-wavelength scale has been hampered by the limitations of conventional near-field methods. In this paper, we address the spatial and spectral mapping of multipolar modes of a Si island by hyper-spectral imaging. The simultaneous detection of several resonant modes allows us to clarify the role of the substrate and the incidence angle of the impinging light, highlighting spectral splitting of the quadrupolar mode and resulting in different spatial features of the field intensity. We explore theoretically and experimentally such spatial features. Details as small as 200 nm can be detected and agree with simulations based on the finite difference time domain method. Our results are relevant to near-field imaging of dielectric structures, the comprehension of the resonant features of sub-micrometric Mie antennas, beam steering, and the resonant coupling with light emitters. Our analysis suggests a novel approach to control the absorption of a single emitter in the framework of surface enhanced absorption or stimulated emission applications.

We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into the substrate via SOD and then diffused by a rapid thermal annealing process. The dopant concentration and electron mobility were characterized at room and low temperature by four-probe and Hall bar electrical measurements. Time-of-flight-secondary ion mass spectroscopy was performed to estimate the diffusion profile of phosphorus for different annealing treatments. We find that a high phosphorous concentration (greater than 1020 atoms cm−3) with a limited diffusion of other chemical species and allowing to tune the electrical properties via annealing at high temperature for short time. The ease of implementation of the process, the low cost of the technique, the possibility to dope selectively and the uniform doping manufactured with statistical process control show that the methodology applied is very promising as an alternative to the conventional doping methods for the implementation of optoelectronic devices.

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