All-dielectric, sub-micrometric particles obtained through solid state dewetting of thin SiGe-films have been shown to support Mie resonances together with a high-quality monocrystalline composition and atomically smooth facets. Recently, a precise study on the impact given by the effective complex morphology of a SiGe dewetted nanoparticle to the Mie scattering properties has been provided and carried on through a novel experimental technique called Dark-field Scanning Optical Microscopy. In this work, by means of the same experimental technique and numerical simulations of light scattering, we show how the presence of a pedestal enriched with silicon placed under the SiGe-nanoparticle results in a sharp peak at high energy in the total scattering cross-section. Exploiting a tilted illumination to redirect scattered light, we are able to discriminate the spatial localization of the pedestal-induced resonance. Our results contribute to extending the practical implementations of dewetted Mie resonators in the field of light scattering directionality, sensing applications and show further engineering options beyond the simple isolated-island case.