where he has been focusing on teaching and research in the field of thin film transistor technology used for flat panel displays. He has published more than 30 papers and awarded for 6 Chinese patents.
Tantalum etched by H2O2 solution shows best performance to be the source/drain electrodes of inverted staggered amorphous Indium Gallium Zinc Oxide thin film transistors among the investigated five metal materials. In addition, the etching property is improved significantly by adding aqueous ammonia properly.
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