Thermal Stability of Amorphous InGaZnO Thin-Film Transistors With Different Oxygen-Contained Active Layers

Hu, Zhe; Chen, Dong; Zhou, Daxiang; Chen, Yuting; Wu, Jie; Xie, Haiting; Chiang, Cheng-Lung; Chen, Po‐Lin; Lai, Tzu-Chieh; Lo, Chang‐Cheng; Lien, A.

doi:10.1109/jdt.2015.2421934

Cited by 10 publications

(4 citation statements)

References 18 publications

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“…We reported that larger concentration variation of V O in AOS TFTs could lead to serious V TH shift during the thermal testing [29]. In addition, the literature [16,34] indicated that N-doping suppressed V O formation in the bulk channels for the thermal tests of a-IGZO:N TFTs.…”

Section: Resultsmentioning

confidence: 89%

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Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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Abstract:The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µ FE = 15.0 cm 2 ·V −1 ·s −1 , SS = 0.5 V/dec, V TH = 1.5 V, I ON /I OFF = 1.1 × 10 8 ) and stability (V TH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

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Section: Resultsmentioning

confidence: 89%

“…The corresponding performance parameters were extracted and listed in Table1. Here, the µFE was calculated from the maximum slope, that was extracted graphically from the square root of drain current, IDS 1/2 , versus gate voltage, VGS, in the saturation region [29,30]. The VTH was achieved from the gate voltage value where IDS/(W/L) = 100 nA.…”

Section: Resultsmentioning

confidence: 99%

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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“…The corresponding device parameters were extracted as Ref. [10] and listed in 6 , which was a little worse than that of the undoped a-IGZO TFTs (~10 7 ). These results were consistent with Ref.…”

Section: Comparative Study Of Oxygen-doped and Nitrogen-doped A-igzo mentioning

confidence: 99%

76-2:Invited Paper: Amorphous Oxide Thin Film Transistors with Nitrogen-doped Active Layers

Xie

et al. 2016

SID Symposium Digest of Technical Papers

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Amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with various nitrogen-doped active layers were studied. Compared with the oxygen-doping, the nitrogen-doping technology could moderately rather than significantly suppress the oxygen vacancies in the channel. Importantly, the doublestacked channel layers (DSCL) including different nitrogendoped AOS films were proposed and investigated, proving that the proper combination of the nitrogen doping and DSCL structure could effectively improve the electrical performance of AOS TFTs.

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“…Even though increasing the oxygen partial pressure during vacuum deposition can decrease the oxygen vacancies and thus the carrier concentration, the actual effect is very limited, and the threshold voltage (V th ) is difficult to be adjusted to 0 V and the stability declines seriously. 9,10 For the preparation of tin oxide film by solution process, since tin oxide naturally contains high oxygen vacancy concentration, it is rather difficult to change the oxygen atom concentration by changing the experimental conditions. Therefore, doping with other ions in SnO 2 TFT has been widely used for decreasing oxygen vacancy concentration and improving electrical properties, such as Zn, 11 Ga, 12 Mg, 13 Y, 14 Tm.…”

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confidence: 99%

Communication—Wide Bandgap Tin Oxide Thin Film Transistor by Doping Rare Earth Element Europium

Yang¹,

Hu²,

Cao³

et al. 2020

ECS J. Solid State Sci. Technol.

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Amorphous europium-doped tin oxide (a-SnEuO) thin film transistors (TFTs) with a wide bandgap of 3.87 eV were prepared by sol-gel method. The results indicate that as Eu content increases, the off-state current of the a-SnEuO TFTs decreases, the threshold voltage (V th ) shifts in the positive direction and the subthreshold swing (S.S.) is also improved. When Eu content is 30 at%, the mobility of a-SnEuO TFTs is 4.5 cm 2 V −1 s −1 , with an S.S. of 0.8 V dec −1 . and a switching ratio of 9.5 × 10 6 . Our study indicates Eu-doped SnO 2 TFT is expected to be the next generation of display technology.

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Thermal Stability of Amorphous InGaZnO Thin-Film Transistors With Different Oxygen-Contained Active Layers

Abstract: where he has been focusing on teaching and research in the field of thin film transistor technology used for flat panel displays. He has published more than 30 papers and awarded for 6 Chinese patents.

Cited by 10 publications

References 18 publications

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

76-2:Invited Paper: Amorphous Oxide Thin Film Transistors with Nitrogen-doped Active Layers

Communication—Wide Bandgap Tin Oxide Thin Film Transistor by Doping Rare Earth Element Europium

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