Communication—Wide Bandgap Tin Oxide Thin Film Transistor by Doping Rare Earth Element Europium

Abstract

Amorphous europium-doped tin oxide (a-SnEuO) thin film transistors (TFTs) with a wide bandgap of 3.87 eV were prepared by sol-gel method. The results indicate that as Eu content increases, the off-state current of the a-SnEuO TFTs decreases, the threshold voltage (V th ) shifts in the positive direction and the subthreshold swing (S.S.) is also improved. When Eu content is 30 at%, the mobility of a-SnEuO TFTs is 4.5 cm 2 V −1 s −1 , with an S.S. of 0.8 V dec −1 . and a switching ratio of 9.5 × 10 6 . Our study indicates Eu-doped SnO 2 TFT is expected to be the next generation of display technology.

A Comparative Study on Self‐Aligned Top‐Gate Thin‐Film Transistors with Silicon Nitride as the Interlayer

“…In this article, lanthanide-doped indium zinc oxide (Ln-IZO) semiconductor is used to be the channel layer, as there have been many studies on the TFTs using lanthanide-doped semiconductor. [15][16][17][18] Lanthanide-doped TFTs have been demonstrated to have good electrical performance and stability. [19,20] Active-matrix flat panel displays, especially AMOLEDs, which utilized a self-aligned TG coplanar structure, seem to have significant potential for mass production.…”