Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Xie, Haiting; Liu, Guochao; Zhang, Lei; Zhou, Yan; Chen, Dong

doi:10.3390/app7101099

Cited by 18 publications

(10 citation statements)

References 34 publications

(54 reference statements)

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“…In general, the objective of N 2 doping in oxide semiconductors is to passivate the oxygen vacancy defects because the metal (Ga, In, Zn) can easily react with N 2 . Therefore, N 2 occupies the oxygen vacancy sites, which results in less oxygen vacancies and better electrical performance of TFTs [25,26]. The in-situ incorporation of N 2 during the sputtering of IGZO was also reported to have enhanced the performance of the IGZO TFT [27].…”

Section: Resultsmentioning

confidence: 99%

Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors

Baek

Yun

Bae

2020

Journal of Information Display

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A solution-based spin-on glass (SOG) was applied to the gate insulator of an oxide thin-film transistor (TFT). The curing atmosphere of the SOG was investigated to enhance the performance of the self-aligned top-gate In-Ga-Zn-O (IGZO) TFT. After the SOG layer was formed on an IGZO active layer, curing was performed under N 2 , air, and O 2 atmospheres. The curing under an N 2 atmosphere resulted in the best device characteristics for the IGZO TFT. After curing, the SOG films were investigated via atomic force microscopy, secondary ion mass spectroscopy, Fourier transform infrared spectroscopy, and capacitance measurement. The results showed that the N 2 pileup at the back surface of the SOG is the main reason for the enhanced performance of the TFT after curing under an N 2 atmosphere.

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Section: Resultsmentioning

confidence: 99%

Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors

Baek

Yun

Bae

2020

Journal of Information Display

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“…Year [Ref. ] Bottom Gate (BG) IZO/IGZO 51.4 0.31 0.19 <10 −12 -2008 [26] BG InSnO (ITO)/IGZO 104 ≈0.5 ≈0.25 <10 −12 -2008 [26] BG IZO/InO 79.1 −0.3 0.09 10 −12 -2019 [28] Top gate (TG) IGZO(212)/IGZO(221) 20.3 ≈15 0.35 <10 −12 -2011 [29] BG ITO/ZnSnO (ZTO) 43.2 −1.03 0.25 10 −12 -2011 [30] BG IZO/AlInZnO 52.6 3.4 0.8 10 −10 -2019 [31] BG IZO/HfInZnO ≈40 ≈0 -<10 −12 -2012 [32] BG IZO/ZTO 32.3 0.5 0.12 10 −12 4.1 2014 [39] BG IGZO/GZO 18.92 2.36 0.33 10 −10 -2014 [50] BG (Corrugated) IGZO/ITZO 38.09 −6.72 0.41 10 −10 -2018 [53] BG IZO/AlSnZnInO 60 −1.52 0.16 <10 −12 -2016 [67] BG IGZO:Ti/IGZO 63 1.15 0.07 10 −11 -2014 [68] BG IZO/IZO(High-In)/IZO 50.4 0.31 0.14 <10 −12 5.1 2016 [69] BG IGZO:N/IZO:N 31.9 −5.0 0.8 10 −12 -2017 [70] BG IGZO/IGZO(High-In) 19.6 −0.9 0.10 10 −12 -2020 [71] TG (Self-Aligned) IZO/IGZO 49.5 2.30 0.18 <10 −12 -2021 [72] BG…”

Section: Resultsmentioning

confidence: 99%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS “heterojunction” is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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“…Alternatively, TFTs with multistacked oxide semiconductors were proposed to modify the channel conduction, [ 15 ] where high carrier density channel acts as a mobility booster and low carrier density channel enhances the electrical stability. [ 15–28 ] To achieve superior electrical performance, most of the multistacked MOS channel engineering were performed on back‐channel etch (BCE) TFTs such as gate insulator (GI)/IZO/IGZO, [ 15 ] GI/Sn‐doped In 2 O 3 (ITO)/IGZO, [ 15 ] GI/ITO/Sn‐doped ZnO (ZTO), [ 16 ] and GI/IGZO/ZnO/IZO [ 25 ] without performing additional doping on either of the active channels. The mechanism of high mobility was not discussed including film density, surface morphology, energy band alignment, and interface properties between GI/active layer.…”

Section: Introductionmentioning

confidence: 99%

“…reported BCE multilayer GI/Ti:GZO/IGZO/Ti:GZO TFTs, [ 19 ] where the presence of Ga and Ti cations is claimed to provide better surface roughness, and efficiently suppress excess carriers to achieve positive V Th , but low μ FE and large I OFF are the trade‐offs. Other reports include high‐ k GI/IGZO/IGZO:Ti, [ 23 ] GI/IGZO:N/IZO:N, [ 24 ] GI/IZO:N/IGZO:N, [ 24 ] and GI/IZO:X/IZO [ 27 ] where X is either Al or Ga metals. These reports speculated that the presence of Ti, N, Al, and Ga cations improve μ FE , however, incorporation of Ga cation and N doping in the MOS layer is previously attributed to the reduction of μ FE by suppressing V O defects.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

Billah

Siddik

Kim

et al. 2021

Adv Elect Materials

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An amorphous indium gallium zinc oxide (a‐IGZO) layer is deposited on very thin conductive amorphous indium zinc oxide (a‐IZO) thin film to demonstrate high‐performance, coplanar thin‐film transistors (TFTs) with dual‐channel oxide semiconductor architecture. Based on material properties, a conduction band offset (∆EC) of ≈0.28 eV between a‐IZO and a‐IGZO layers and a conduction band bending of ≈0.3 eV at a‐IGZO/gate insulator (GI) interface exist. Through the electrical characterization, high field‐effect mobility (μFE) of ≈50 cm2 V−1 s−1, a positive threshold voltage (VTh) of ≈2.3 V, and low off‐current (IOFF) of <1 pA in coplanar a‐IZO/a‐IGZO TFT are demonstrated. The electron accumulation (>5 × 1018 cm−3) at both the a‐IZO/a‐IGZO and a‐IGZO/GI interfaces confirm the dual‐channel conduction. The bottom a‐IZO channel significantly contributes to increasing drain current (ID) due to large electron density (≈1019 cm−3). The dual‐channel coplanar TFT with a‐IGZO/IZO provides a guideline for overcoming the trade‐off between high μFE and positive VTh control for stable enhancement mode operation with increased ID.

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Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Cited by 18 publications

References 34 publications

Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors

Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

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