The model of the Early effect at nanonode devices should be modified owing to the unignored contribution of vertical gate field. This effect is more obvious when the channel length is decreased more. Using higher decoupled plasma nitridation nitrogen treatment after high-k dielectric deposition, besides enhancing the drive current due to promoting the microscopic homogeneity of the Hf-based film, seems also to little suppress the Early effect. This phenomenon at L = 0.03 μm device is proved and due to the lower β-slope of influencing the high-vertical field.Index Terms-Decoupled plasma nitridation (DPN), Early effect, high-k (HK) dielectric, model, MOSFET.

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Increasing the electrical performance of the MOSFETs with contact etch stop layer (CESL) and SiGe channel technologies in strain engineering is indeed approached. Using silicon capping layer performs the benefits on the smoothness of channel surface and the prevention of germanium penetration from SiGe layer. In this study, the deposited capping layer thicknesses with SiGe channel of (110) substrate wafer were 1.5 and 3.0 nm on the poly gate. The interesting device parameters including drive current, transconductance, threshold voltage (V T ) and subthreshold swing (S.S.) with temperature effect are systematically analyzed.

In this work, it can be seen that the effect of channel length modulation for NMOSFETs under high-k/metal gate deposition depicts a minor deviation with different nitridation annealing temperatures. This consequence, however, strongly correlates to the channel length and the gate voltage playing as a vertical field. As the channel length is narrowed down, the horizontal field coming from drain voltage on the channel is increased more and compresses the effective channel length, reflecting on the Early voltage V A . In the past, all of I D vs. V D curves after extrapolation would approach an identical intersection point. But this phenomenon should be modified more right now.