CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Abstract

In this work, it can be seen that the effect of channel length modulation for NMOSFETs under high-k/metal gate deposition depicts a minor deviation with different nitridation annealing temperatures. This consequence, however, strongly correlates to the channel length and the gate voltage playing as a vertical field. As the channel length is narrowed down, the horizontal field coming from drain voltage on the channel is increased more and compresses the effective channel length, reflecting on the Early voltage V A . In the past, all of I D vs. V D curves after extrapolation would approach an identical intersection point. But this phenomenon should be modified more right now.