Choosing a plasma nitridation treatment with some annealing technique incorporated into the gate engineering is helpful to fix the existence of oxygen vacancy and promote the crystallization temperature in high-k dielectric. Here is the higher annealing atmosphere as a whole providing the better drive current in p-channel metal-oxide-semiconductor fieldeffect transistors, compared with the lower one. The interface traps for the former, however, is slightly greater than the latter, causing a higher gate leakage in the middle electrical field operated at inversion mode. This phenomenon is more obvious in the tested short-channel device. A sandwich type of HfO x /ZrO y /HfO x as gate dielectric at 28 nm node process is a fine selection to withstand or decrease the possibility of the formation of micro-or nanocrystallization increasing the gate leakage.Index Terms-Annealing, decoupled plasma nitridation (DPN), gate leakage, high-k dielectric, MOSFET.

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A study of a transimpedance amplifier (TIA) using three cascade variable inverter gain stages is presented. It is shown that wide dynamical range ( − 38 dbm) and high bandwidth (500 Mhz) TIA can be achieved. This configuration is good for the optical transmission of OC-3.

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