A ferroelectric semiconductor field-effect transistor (FeS-FET) was proposed and experimentally demonstrated for the first time. In this novel FeS-FET, a two-dimensional (2D) ferroelectric semiconductor α-In2Se3 is used to replace conventional semiconductor as channel.α-In2Se3 is identified due to its proper bandgap, room temperature ferroelectricity, the ability to maintain ferroelectricity down to a few atomic layers and the feasibility for large-area growth.An atomic-layer deposition (ALD) Al2O3 passivation method was developed to protect and enhance the performance of the α-In2Se3 FeS-FETs. The fabricated FeS-FETs exhibit high performance with a large memory window, a high on/off ratio over 10 8 , a maximum on-current of 671 μA/μm, high electron mobility of 488 cm 2 /V•s, and the potential to exceed the existing Fe-FETs for non-volatile memory applications.

The advent of graphene has evoked the re-examination of band topology of Dirac/Weyl nodal materials which can host low-energy realistic quasiparticles. Under strong magnetic fields, the topological properties of two-dimensional Dirac/Weyl materials can be directly manifested through quantum Hall states. Here we report the first observation of massive Weyl fermions through quantum Hall effect in n-type Weyl semiconductor tellurene (two-dimensional form of tellurium). The n-type doping profile forms a wide quantum well in tellurene, where two correlated layers of electrons create a pair of symmetric-antisymmetric energy states in addition to spin and valley degeneracy, leading to an approximate SU(8) isospin symmetry. The chirality-induced Weyl nodes residing near the edge of the conduction band give rise to radial spin texture, and topologically non-trivial  Berry phase was detected in quantum Hall sequences. Our work presents strong evidence of massive Weyl fermions and expands the spectrum of Weyl matters into semiconductor regime.

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ω⋅mm and a low contact resistivity of 1.1×10 -7 Ω⋅cm 2 . The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line (BEOL) CMOS application.

Parasitic Entamoeba spp. can infect many classes of vertebrates including humans and pigs. Entamoeba suis and zoonotic Entamoeba polecki have been identified in pigs, and swine are implicated as potential reservoirs for Entamoeba histolytica. However, the prevalence of Entamoeba spp. in pigs in southeastern China has not been reported. In this study, 668 fecal samples collected from 6 different regions in Fujian Province, southeastern China, were analyzed to identify three Entamoeba species by nested PCR and sequencing analysis. The overall prevalence of Entamoeba spp. was 55.4% (370/668; 95% CI 51.6% to 59.2%), and the infection rate of E. polecki ST1 was the highest (302/668; 45.2%, 95% CI 41.4% to 49.0%), followed by E. polecki ST3 (228/668; 34.1%, 95% CI 30.5% to 37.7%) and E. suis (87/668; 13.0%, 95% CI 10.5% to 15.6%). E. histolytica was not detected in any samples. Moreover, the coinfection rate of E. polecki ST1 and ST3 was 25.1% (168/668; 95% CI 21.9% to 28.4%), the coinfection rate of E. polecki ST1 and E. suis was 3.7% (25/668; 95% CI 2.3% to 5.2%), the coinfection rate of E. polecki ST3 and E. suis was 0.3% (2/668), and the coinfection rate of E. polecki ST1, E. polecki ST3, and E. suis was 4.0% (27/668; 95% CI 2.5% to 5.5%). A representative sequence (MK347346) was identical to the sequence of E. suis (DQ286372). Two subtype-specific sequences (MK357717 and MK347347) were almost identical to the sequences of E. polecki ST1 (FR686383) and ST3 (AJ566411), respectively. This is the first study to survey the occurrence and to conduct molecular identification of three Entamoeba species in southeastern China. This is the first report regarding mixed infections with E. suis, E. polecki ST1, and E. polecki ST3 in China. More research studies are needed to better understand the transmission and zoonotic potential of Entamoeba spp.

The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, optoelectronic, and piezoelectric applications. In this paper, we first review recent progress in synthesizing atomically thin Te two-dimensional (2D) films and one-dimensional (1D) nanowires. Its applications in field-effect transistors and potential for building ultra-scaled Complementary metal–oxide–semiconductor (CMOS) circuits are discussed. We will also overview the recent study on its quantum transport in the 2D limit and progress in exploring its topological features and chiral-related physics. We envision that the breakthrough in obtaining high-quality 2D Te films will inspire a revisit of the fundamental properties of this long-forgotten material in the near future.

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weakantilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that D'yakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analogue applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current in planar FET, exceeding 10 A/mm, the performance of which is 2–3 times better than all known transistors with semiconductor channels. A high transconductance reaches 4 S/mm, recorded among all transistors with a planar structure. Planar FETs working ballistically or quasi-ballistically are exploited as one of the simplest platforms to investigate the intrinsic transport properties. It is found experimentally and theoretically that a high carrier density and high electron velocity both contribute to this high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I–V, and split C–V measurements at room temperature confirm a high carrier density of up to 6–7 × 1013 /cm2 and a high velocity of about 107 cm/s, well-supported by density functional theory (DFT) calculations. The simultaneous demonstration of such high carrier concentration and average band velocity is enabled by the exploitation of the ultrafast pulse scheme and heat dissipation engineering.

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