BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10<sup>14</sup>/cm<sup>2</sup> at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Si, Mengwei; Murray, Anna; Lin, Zehao; Andler, Joseph; Li, Junkang; Noh, Jinhyun; Alajlouni, Sami; Niu, Chang; Xiao, Lei; Zheng, Dongqi; Maize, Kerry; Shakouri, Ali; Datta, Suman; Ye, Peide D.

doi:10.1109/ted.2021.3061038

Cited by 24 publications

(11 citation statements)

References 15 publications

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“…Furthermore, advantages such as moderate field-effect mobility (μ FE ), low off-current down to 10 –24 A/μm, wide band gap of ∼3.2 eV, and its low-temperature processing capability (∼400 °C) makes O/S a promising candidate for back-end-of-line (BEOL) compatible transistors for logic, memory, and monolithic 3D integrated devices. For these reasons, O/S composition systems such as IGZO, − indium gallium oxide (IGO), − In 2 O 3 , − indium tin oxide (ITO), , etc., based on the ALD technique, have been studied recently, including the examination of suitability as a channel layer for several O/S substances. However, less is known regarding the design or feasibility of short-channel (<submicrometer scale) O/S TFTs on the basis of the following natural length (λ): , λ = t b t ox ε b ε ox where λ is the natural length that determines the transistor size, t b and t ox are the thicknesses of the body channel and GI layer, respectively, and ε b and ε ox are the dielectric constants of the body channel and gate insulator (GI) layer, respectively.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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“…Figure summarizes the device performances of an oxide-CMOS inverter composed of the 2D-ITO-TFTs with p-channel 2D-SnO-TFTs, which is also fabricated with the liquid-metal route in air , (see Figure S9 for the optical microscopic image of 2D-SnO nanosheet). The p-channel 2D-SnO-TFT with ∼30 nm thick ALD-Al 2 O 3 gates showed reasonable TFT performances, such as μ SAT of ∼0.3 cm 2 V –1 s –1 , s -value of ∼2.3 V decade –1 , V th of −1 V, and on/off-current ratio of >10 4 (Figure a).…”

Section: Results and Discussionmentioning

confidence: 99%

“…The 2D-oxide channel ( t channel < 5 nm) technology has recently attracted a great deal of interest as an important step to develop high-performance oxide TFTs. Si et al fabricated a 2 nm-thick 2D-ITO channel by a top-down approach using chemical wet-etching and successfully demonstrated excellent TFT performances such as a high field-effect mobility (μ FE ) of ∼55 cm 2 V –1 s –1 and an on/off-current ratio of ∼10 7 using ∼20 nm atomic layer deposition (ALD)-HfZrO high- k gate oxide at the process temperature of 400 °C. , Compared with the top-down wet-etching process that requires precise control of process conditions, the bottom-up process has several advantages such as simple fabrication with less process steps, low-density defects in the semiconductor channel, low process temperature, and good film uniformity. Developing a 2D-ITO channel by low-temperature bottom-up growth such as vacuum-free liquid-metal printing, a method transferring ultrathin oxide skins from melting metal to a substrate, − is highly promising for 2D-channel oxide-TFTs.…”

Section: Introductionmentioning

confidence: 99%

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

2022

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A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an electron density of ∼1.2 × 1019 cm–3 was prepared in an ambient atmosphere. The 2D-ITO-TFT operated in full depletion with a threshold voltage of −2.1 V and demonstrated good TFT device characteristics such as a high saturation mobility of ∼27 cm2 V–1 s–1, a small subthreshold slope of <382 mV decade–1, and a large on/off-current ratio of >109. The TFT device simulation analysis found that the 2D-ITO-TFT performances were controlled by the shallow acceptor-like in-gap defects spreading in the midgap region of over 1.0 eV below the conduction band minimum. Post-thermal annealing tuned the electron density of the 2D-ITO channel and enabled it to produce enhancement and depletion-mode 2D-ITO-TFTs. A full signal swing zero-V GS-load n-type metal–oxide semiconductor (NMOS) inverter composed of depletion-load/enhancement-driver 2D-ITO-TFTs and a complementary inverter with p-channel 2D-SnO-TFT were successfully demonstrated using all 2D-oxide-TFTs.

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“…Functional complex oxides with unique functionalities have drawn much attention in recent years in the development of nanoelectronic devices. − Multiferroic oxide materials, those possessing multiple ferroic orders, e.g., exhibiting simultaneous ferromagnetism and ferroelectricity, have been an area of research for many decades. − The particular interest in these materials stems from their use in memory storage, such as spintronic tunnel junction devices, magnetoelectric random access memory, , four-state memory, and spin filters …”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Aurivillius Bi₃Fe₂Mn₂O_x Supercell Thin Films on Silicon

Barnard

Paldi

Kalaswad

et al. 2023

Crystal Growth & Design

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Nanoelectronic devices integrated with functional complex oxides have drawn much attention in recent years. However, due to material and processing compatibility issues, integrating functional complex oxides with Si-based devices is challenging, and success has been limited. As an example, the Bi3Fe2Mn2O x (BFMO) supercell system, a single-phase layered oxide made by compositing BiFeO3 and BiMnO3, has been studied for much of the past decade for its unusual layered Aurivillius structure and magnetic and ferroelectric properties. However, most of the BFMO thin film growth has been demonstrated on single-crystal oxide substrates such as SrTiO3 and LaAlO3. In this work, we demonstrate that the BFMO layered supercell phase can be integrated on Si with high epitaxial quality using a buffer stack of TiN/SrTiO3/CeO2. Further understanding of the strain-controlled growth of the BFMO supercell phase has allowed such Si integration. Microstructure, magnetic, ferroelectric, and optical properties of the BFMO films on Si have been characterized and compared with those of BFMO on SrTiO3 single-crystal substrates, demonstrating comparable epitaxial quality and physical properties. Integrating multiferroic BFMO oxides on Si demonstrates the potential of layered supercell oxides in practical device applications such as ferroelectric field effect transistors.

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Cited by 24 publications

References 15 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

Epitaxial Growth of Aurivillius Bi₃Fe₂Mn₂O_x Supercell Thin Films on Silicon

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Cited by 24 publications

References 15 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon

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Product

Resources

About

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Epitaxial Growth of Aurivillius Bi₃Fe₂Mn₂O_x Supercell Thin Films on Silicon