A novel molecular‐ink deposition route based on thiourea and N,N‐dimethylformamide (DMF) that results in a certified solar cell efficiency world record for non‐vacuum deposited CuIn(S,Se)2 (CIS) absorbers and non‐vacuum deposited absorbers with a bandgap of 1.0 eV, is presented. It is found that by substituting the widely employed solvent dimethyl sulfoxide with DMF, the coordination chemistry of InCl3 could be altered, dramatically improving ink stability, enabling up to tenfold increased concentrations, omitting the necessity for elevated ink temperatures, and radically accelerating the deposition process. Furthermore, it is shown that by introducing compositionally graded precursor films, film porosity, compositional gradients, and the surface roughness of the absorbers are effectively reduced and device conversion efficiencies are increased up to 13.8% (13.1% certified, active area). The reduced roughness is also seen as crucial to realize monolithically interconnected CIS‐perovskite tandem devices, where semitransparent MAPbI3 devices are directly deposited on the CIS bottom cell. Confirming the feasibility of this approach, monolithic devices with near perfect voltage addition between subcells of up to 1.40 V are presented.

Molecular inks based on dimethyl sulfoxide, thiourea (TU), and metal salts have been used to form high optoelectronic quality semiconductors and have led to high power conversion efficiencies for solution-processed photovoltaic devices for Cu2ZnSn­(S,Se)4 (CZTS), Cu2Zn­(Ge,Sn)­(S,Se)4 (CZGTS), CuIn­(S,Se)2 (CIS), and Cu­(In,Ga)­(S,Se)2 (CIGS). However, several metal species of interest, including Ag­(I), In­(III), Ge­(II), and Ge­(IV), either have low solubility (requiring dilute inks) or lead to precipitation or gelation. Here, we demonstrate that the combination of N,N-dimethyl­formamide (DMF) and TU has the remarkable ability to form intermediate-stability acid–base complexes with a wide number of metal chloride Lewis acids (CuCl, AgCl, ZnCl2, InCl3, GaCl3, SnCl4, GeCl4, and SeCl4), to give high-concentration stable molecular inks. Using calorimetry, Raman spectroscopy, and solubility experiments, we reveal the important role of chloride transfer and TU to stabilize metal cations in DMF. Methylation of TU is used to vary the strength of the Lewis basicity and demonstrate that the strength of the TU-metal chloride complex formed after DMF evaporation is critical to prevent volatilization of metal containing species. Further, we formulated a sulfur-free molecular ink which was used to deposit crystalline CuInSe2 without selenization that sustains high quasi-Fermi level splitting under constant illumination. Finally, we demonstrate the ability of the DMF-TU molecular ink chemistry to lead to high-photovoltaic power conversion efficiencies and high-open-circuit voltages for solution-processed CIS and CZGTS with power conversion efficiencies of 13.4% and 11.0% and V oc/V oc,SQ of 67% and 63%, respectively.

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