The SwissFEL X-ray Free Electron Laser (XFEL) facility started construction at the Paul Scherrer Institute (Villigen, Switzerland) in 2013 and will be ready to accept its first users in 2018 on the Aramis hard X-ray branch. In the following sections we will summarize the various aspects of the project, including the design of the soft and hard X-ray branches of the accelerator, the results of SwissFEL performance simulations, details of the photon beamlines and experimental stations, and our first commissioning results.

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In this paper we report quantitative measurements of the imaging performance for the current generation of hybrid pixel detector, Medipix3, used as a direct electron detector. We have measured the modulation transfer function and detective quantum efficiency at beam energies of 60 and 80keV. In single pixel mode, energy threshold values can be chosen to maximize either the modulation transfer function or the detective quantum efficiency, obtaining values near to, or exceeding those for a theoretical detector with square pixels. The Medipix3 charge summing mode delivers simultaneous, high values of both modulation transfer function and detective quantum efficiency. We have also characterized the detector response to single electron events and describe an empirical model that predicts the detector modulation transfer function and detective quantum efficiency based on energy threshold. Exemplifying our findings we demonstrate the Medipix3 imaging performance recording a fully exposed electron diffraction pattern at 24-bit depth together with images in single pixel and charge summing modes. Our findings highlight that for transmission electron microscopy performed at low energies (energies <100keV) thick hybrid pixel detectors provide an advantageous architecture for direct electron imaging.

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.

The SwissFEL soft X-ray free-electron laser (FEL) beamline Athos will be ready for user operation in 2021. Its design includes a novel layout of alternating magnetic chicanes and short undulator segments. Together with the APPLE X architecture of undulators, the Athos branch can be operated in different modes producing FEL beams with unique characteristics ranging from attosecond pulse length to high-power modes. Further space has been reserved for upgrades including modulators and an external seeding laser for better timing control. All of these schemes rely on state-of-the-art technologies described in this overview. The optical transport line distributing the FEL beam to the experimental stations was designed with the whole range of beam parameters in mind. Currently two experimental stations, one for condensed matter and quantum materials research and a second one for atomic, molecular and optical physics, chemical sciences and ultrafast single-particle imaging, are being laid out such that they can profit from the unique soft X-ray pulses produced in the Athos branch in an optimal way.

Electrically gated pulsed field emission from molybdenum field emitter arrays was studied. Single-gate field emitter array devices supported by metallic substrates were fabricated by a combination of molding and a self-aligned gate process. Devices were tested in a low-inductance cathode holder compatible with the high-acceleration electric field of a pulsed diode gun. Pulsed field emission down to 1.1 ns was observed for single-gate devices with 1.2ϫ 10 3 -1.2ϫ 10 5 emitter tips with 5 m array pitches. Integrating the field emitter arrays in a high-voltage pulsed diode gun, the authors demonstrated nanosecond field emission at an acceleration field of 30 MV/m at the cathode surface and acceleration of the field emission electron beam up to 300 keV. In addition, transverse beam emittance of the single-gate devices was measured with two different array sizes.

The authors explore the generation of short electron bunches from a field-emitter array cathode consisting of nanometer-sized metallic tips that is compatible with an acceleration electric field above 10 MV/m. Sub-nanosecond field emission electron bunches were generated by applying fast electrical pulses to an on-chip electron extraction gate electrode of the cathode. The subsequent acceleration of the field emission electron bunches to 5 MeV was demonstrated using the combined diode-RF cavity SwissFEL electron gun test facility. V

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