This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage expressions, we use the J/V characteristic to determine the solar cell series and shunt resistances. The maximum electric power of the solar cell is determined using the curves of electric power versus junction dynamic velocity, and then, the fill factor and conversion efficiency are calculated. Light concentration and junction dynamic velocity effects on solar cell short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency are also studied. The study proved that with increase of illumination light intensity, the solar cell shunt resistances decreases whereas series resistance, short circuit current, open circuit voltage, electric power, fill factor and conversion efficiency increases.

It is well known that temperature acts negatively on practically all the parameters of photovoltaic solar cells. Also, the solar cells which are subjected to particularly very high temperatures are the light concentration solar cells and are used in light concentration photovoltaic systems (CPV). In fact, the significant heating of these solar cells is due to the concentration of the solar flux which arrives on them. Light concentration solar cells appear as solar cells under strong influences of heating and temperature. It is therefore necessary to take into account temperature effect on light concentration solar cells performances in order to obtain realistic results. This one-dimensional study of a crystalline silicon solar cell under light concentration takes into account electrons concentration gradient electric field in the determination of the continuity equation of minority carriers in the base. To determine excess minority carrier's density, the effects of temperature on the diffusion and mobility of electrons and holes, on the intrinsic concentration of electrons, on carrier's generation rate as well as on width of band gap have also been taken into account. The results show that an increase of temperature improves diffusion parameters and leads to an increase of the short-circuit photocurrent density. However, an increase of temperature leads to a significant decrease in open-circuit photovoltage, maximum electric power and conversion efficiency. The results also show that the operating point and the maximum power point (MPP) moves to the open circuit when the cell temperature increases.

The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are: the mobility of solar cell carriers (electrons and holes), their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μ n, (T) μ p (T)). Then, the resolution of the continuity equation, which is a function of the carriers gradient electric field and the carriers mobility, leads to the expressions of the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of 292 Smart Grid and Renewable Energy the temperature. We observe also that with the increase of the temperature, the density of carriers in the base of the solar cell in short circuit and open voltage operating modes increases. In intermediate operating mode, the density of carriers increases also with the temperature but it is function of the base depth.

The solar cell is assumed to be under light concentration (C=50 Suns) which leads us to take into consideration the electric field induced by electrons concentration gradient. We also take into consideration temperature influence on electron and hole diffusion parameters, on carrier generation rate, on carrier intrinsic concentration and on silicon energy gap. It emerges from results analysis that increase in temperature leads to decrease of open-circuit voltage and the photovoltaic parameters at the maximum power point (MPP) such as electric power, photo-voltage and photocurrent with however a slight increase of short-circuit photocurrent density. It also appears that temperature has a double effect on electrical parameters. The temperature dynamic effect which is characterized by parameters variations linked to operating point displacement caused by temperature variations. And the temperature proper effect which is characterized by parameters variation with temperature at a given operating point. Thus, the combination of these two effects represents temperature effective effect.

This manuscript is about the electric output of the silicon (Si) photovoltaic (PV) cell versus the electromagnetic field of a radio wave and a monochromatic illumination in three-dimensional (3D) assumptions. The polarisation direction of the electromagnetic wave and power density are fixed. The electromagnetic wave is provided by electromagnetic emission sources such as the telecommunication, radio, or TV antennas. A PV system is installed in the vicinity of an electromagnetic emission source. The current produced by the PV cell is sensitive to electromagnetic field increase more than the electric voltage. The electromagnetic field causes the decomposition of the current into two components which are a transferred current and a leakage current. The transferred component provides the transmitted current to the external load while the leakage component gives the loss of the carrier charge into the junction. Consequently, this decomposition of the current shares the electric power in transferred electric power and leakage electric power. The transferred electric power is obtained only in the intermediate circuit, and the maximum power point (MPP) shifts to the short circuit situation as the junction dynamic velocity becomes the greatest. However, the leakage electric power corresponds to a loss of the minority carrier’s charge in the junction during the crossing of the junction. This loss causes a Joule heating effect of the junction. The heating of the junction causes the quality degradation of the PV cell mainly due to the electric component. The solar illumination wavelength is presenting the inversion phenomenon with the maximum of the electrical outputs of the silicon PV cell of around 0.70 μm which provides the greatest conversion efficiency. This value has been chosen for the modelling of the radio wave influence. Hence, the conversion efficiency increases when the PV system is far away from the electromagnetic emission source. PV system installation in the vicinity of an electromagnetic emission source is not advised.

This work put in evidence, magnetic field effect the electrical parameters of a silicon solar cell illuminated by an intense light concentration: external load electric power, conversion efficiency, fill factor, external optimal charge load. Due to the high photogeneration of a carrier in intense light illumination mode, in addition of magnetic field, we took into account the carrier gradient electric field in the base of the solar cell. Taking into account this electric field and the applied magnetic field in our model led to new analytical expressions of the continuity equation, the photocurrent and the photovoltage. In this work, we used the electric power curves versus junction dynamic velocity (S j ) to determine, according to magnetic field, the maximum electric power P elmax and we calculate the solar cell conversion efficiency (η). We also used the J-V characteristics to determine the solar cell short circuit density current (J cc ) and the open circuit voltage (V co ) under magnetic field and we calculate the fill factor (FF). Finally, we used simultaneously the J-V characteristics and equipower curves to determine the optimal external load resistance. The results of this study have showed that the maximum electric power and the conversion efficiency are higher than those of monofacial and bifacial silicon solar cells illuminated by conventional light but they decreased with the increase of magnetic field.

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 10 13 cm −3 -10 16 cm −3 , a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.