This article presents a one dimensional modeling of the influence of electromagnetic waves on the electric power delivered by a silicon solar cell under monochromatic illumination in steady state. The electromagnetic waves are produced by an amplitude modulation radio antenna of 2MW power of radiation and located at a variable distance of the solar cell [ [ +∞ , m 10. The magnetotransport and continuity equations of excess minority carriers are solved with boundary conditions and led to new analytical expressions of minority carrier's density, photocurrent density, photovoltage and electric power depending on electromagnetic field intensity and wavelength λ. The dependence of the electromagnetic field and the incident light wavelength on photocurrent density, photovoltage and electric power is studied. The intensity of the electromagnetic field depends on the distance between the solar cell and the amplitude modulation radio antenna. We determine the peak power and the operating point of the solar cell according to distance or electromagnetic field intensity and also according to the wavelength of the monochromatic light.
In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field; the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers' mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.
This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage expressions, we use the J/V characteristic to determine the solar cell series and shunt resistances. The maximum electric power of the solar cell is determined using the curves of electric power versus junction dynamic velocity, and then, the fill factor and conversion efficiency are calculated. Light concentration and junction dynamic velocity effects on solar cell short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency are also studied. The study proved that with increase of illumination light intensity, the solar cell shunt resistances decreases whereas series resistance, short circuit current, open circuit voltage, electric power, fill factor and conversion efficiency increases.
One-dimensional study of both electronic and electrical parameters of a silicon solar cell in the presence or not of an electric field, a magnetic field, or an electromagnetic field does not take into account the grain size and the grain boundary recombination velocity. A three-dimensional study, on the contrary, takes those factors into account.However, the three-dimensional study poses the problem of the attenuation of the wave in the grain of the polycrystalline solar cell as well as the issue of finding the expressions of its components. This study aimed to solve these issues by considering radio waves, which are becoming more and more present in our environment via telecommunication masts.We first obtained the expressions of both the electric field and magnetic field in a grain of a polycrystalline silicon solar cell by solving the dispersion equation. Then we investigated the evolution of the radio wave into the grain by analyzing the behavior of the exponential coefficient that appeared in the expressions of both the electric field and the magnetic field. The study has shown that the attenuation of the radio wave can be neglected through the polycrystalline silicon solar grain and by extension through the polycrystalline silicon solar cell.
In this work, a modeling study of the effect of the junction quality on the performance of a silicon solar cell is presented. Based on a one dimensional modeling of the solar cell, the continuity equation of excess minority carriers is solved with boundary conditions taking into account the intrinsic junction recombination velocity and led to analytical expressions of photocurrent density, photovoltage and electric power. The effect of the intrinsic junction recombination velocity or the solar cell junction quality on photocurrent, photovoltage and electric power, is exhibited and we determine the maximum electric power, the junction dynamic velocity at the maximum power point and the conversion efficiency according to the junction quality of the solar cell. From the electric power lost at the junction, we calculated the shunt resistance of the solar cell according to the junction quality.
Experimental setup of transient decay which occurs between two steady state operating points is recalled. The continuity equation is resolved using both the junction dynamic velocity (Sf) and back side recombination velocity (Sb). The transient excess minority carriers density appears as the sum of infinite terms. Influence of magnetic field on the transient excess minority carriers density and transient photo voltage is studied and it is demonstrated that the use of this techniqueis valid only when the magnetic field is lower than 0.001 T.
The solar cell is assumed to be under light concentration (C=50 Suns) which leads us to take into consideration the electric field induced by electrons concentration gradient. We also take into consideration temperature influence on electron and hole diffusion parameters, on carrier generation rate, on carrier intrinsic concentration and on silicon energy gap. It emerges from results analysis that increase in temperature leads to decrease of open-circuit voltage and the photovoltaic parameters at the maximum power point (MPP) such as electric power, photo-voltage and photocurrent with however a slight increase of short-circuit photocurrent density. It also appears that temperature has a double effect on electrical parameters. The temperature dynamic effect which is characterized by parameters variations linked to operating point displacement caused by temperature variations. And the temperature proper effect which is characterized by parameters variation with temperature at a given operating point. Thus, the combination of these two effects represents temperature effective effect.
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