Influence of Incident Illumination Angle on Capacitance of a Silicon Solar  Cell under Frequency Modulation

Thiam, Ababacar; Zoungrana, M.; Diallo, H. Ly; Diao, Amadou; Thiam, N.; Gueye, Sega; Deme, Moussa; Sarr, M.; Sissoko, G.

doi:10.19026/rjaset.5.4825

Cited by 11 publications

(12 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Coefficients A and B are determined through the following boundary conditions at the junction (x=0) [4], [5], [6]:…”

Section: Nbmentioning

confidence: 99%

Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Dieme¹

2015

AJOP

View full text Add to dashboard Cite

This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.

show abstract

“…Coefficients A and B are determined through the following boundary conditions at the junction (x=0) [4], [5], [6]:…”

Section: Nbmentioning

confidence: 99%

Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Dieme¹

2015

AJOP

View full text Add to dashboard Cite

show abstract

“…The recombination velocity at the junction reflects the stream of carriers crossing the junction [7]. For higher Sf, the carrier flow through the junction increases so that the generated photocurrent also increases: the solar cell operates near short circuit [10].…”

Section: Photocurrent Densitymentioning

confidence: 99%

Photocurrent and Photovoltage Under Influence of the Solar Cell Thickness

DIEME¹,

SANE²,

BARRO³

2015

Theoretical & Applied Science

View full text Add to dashboard Cite

show abstract

“…I. Ly et al have determined recombination parameters for various illumination levels, from which they evaluated only microscopic parameters of a bifacial solar cell [4]. However, they have not determined macroscopic parameters in particular, shunt and series resistance [5]- [8].…”

Section: Introductionmentioning

confidence: 99%

Illumination Level Effects on Macroscopic Parameters of a Bifacial Solar Cell

nbsp¹,

Sissoko²

2014

EPE

Self Cite

View full text Add to dashboard Cite

This study presents a method based on the experimental measurement of the short-circuit current (I cc) and the open circuit voltage (V co) of the solar cell. It permits the determination of recombination parameters such as: diffusion length (L), back surface recombination velocity (Sb), intrinsic junction recombination velocity (Sjo), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.

show abstract

Influence of Incident Illumination Angle on Capacitance of a Silicon Solar Cell under Frequency Modulation

Cited by 11 publications

References 10 publications

Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Photocurrent and Photovoltage Under Influence of the Solar Cell Thickness

Illumination Level Effects on Macroscopic Parameters of a Bifacial Solar Cell

Contact Info

Product

Resources

About