Effect of junction quality on the performance of a silicon solar cell

Zerbo, Issa; Zoungrana, M.; Ouedraogo, Adama; Bathiébo, Dieudonné Joseph

doi:10.4314/jfas.v9i2.26

Cited by 10 publications

(7 citation statements)

References 6 publications

(12 reference statements)

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“…Except the curve of θ � π/2 rad, which is similar to the traditional curve of electric power [12][13][14][15][16] because the electromagnetic field is null (absence of radio wave) and does not impact it, the other curves present four zones but three very significant. e three very significant zones of the curves are marked in Figure 2.…”

Section: Effect Of Electromagnetic Field's Incidence Angle On the Outmentioning

confidence: 81%

Effect of Reverse Polarisation of an Electromagnetic Field on the Performance of a Silicon PV Cell

Saria

Zouma

Korgo

et al. 2020

Advances in Materials Science and Engineering

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This paper investigated, by one-dimensional modelling, the effects of reverse polarisation of an electromagnetic field, generated by an amplitude modulation radio antenna, on the efficiency of a silicon PV cell. Through a simulation, the effects of both the incidence angle and the electromagnetic field magnitude on the power output of the PV cell are analyzed. The power output curves against the junction dynamic velocity are used to find the junction dynamic velocity at the equilibrium, the maximum power output, and the efficiency of the PV cell. The results have shown that the presence of important electromagnetic fields in the neighborhood of a silicon PV cell decreases its performance.

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Section: Effect Of Electromagnetic Field's Incidence Angle On the Outmentioning

confidence: 81%

Effect of Reverse Polarisation of an Electromagnetic Field on the Performance of a Silicon PV Cell

Saria

Zouma

Korgo

et al. 2020

Advances in Materials Science and Engineering

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“…S f 0 provides the intrinsic junction recombination velocity related to the losses of carriers charge at the junction interface and S f j provides the flow of the minority carriers in excess crossing the p − n junction. It is imposed by an external load and fixes the operating point of the PV cell [29]. For the ideal solar cell assumption, S f 0 = 0.…”

Section: Excess Minoritary Carriers Chargementioning

confidence: 99%

“…is the reduced Plank constant, m * c and m * v are respectively effective masses in the conduction and valence bands of the silicon semi-conductor. Among the processes, there is the thermodynamic process and its efficiency is given by η thermo = eV oc ε e + ε h (29) In physics interpretation of this process, it can say that it provides the maximum chemical energy which can be extracted from the energy of the electron−hole pairs and it is giving the efficiency accounting for the difference between free energy and energy with a thermodynamic factor. The last process is about the extraction of maximum electric power (P max ) compared to the ideal electric power (V oc .J ph sc ).…”

Section: Individual Efficienciesmentioning

confidence: 99%

Individual Energetic Processes Efficiencies in a Polycrystalline Silicon PV Cell Versus Electromagnetic Field

Ouédraogo

Savadogo

Honadia

et al. 2021

Silicon

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The Photovoltaic (PV) system is often installed near the telecommunication antenna without takes account the performance degradation that the electromagnetic field can cause. The present work provides the recognition about the greatest losses occur which can cause the overall efficiency drop. In fact, the absorption and the thermodynamic processes are more sensitive to the variation of the electromagnetic field more than FF and thermalization processes in presence of the electromagnetic field. The absorption and thermodynamic mechanism are the main cause of the degradation of the polycrystalline silicon PV cell outputs. The PV cell having height base doping level to get a better resistivity to the electromagnetic field must be chosen to improve theses outputs. Then a low electromagnetic field zones must be searched to install the PV system improving its electrical production performance.

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“…S f is the junction dynamic velocity, and it quantifies the number of excess carriers which are collected in junction in a given operating condition (open circuit, intermediate operating point, and short circuit) [32][33][34]. S b is the back surface recombination velocity, and it quantifies the losses of the carrier charge at the solar cell's rear side [32].…”

Section: Continuity Equationmentioning

confidence: 99%

Investigation of the Polycrystalline Silicon PV Cell Efficiency in 3D Approximation versus Electromagnetic Field under Monochromatic Illumination

Ouédraogo

Soro

Konaté

et al. 2021

International Journal of Photoenergy

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This manuscript is about the electric output of the silicon (Si) photovoltaic (PV) cell versus the electromagnetic field of a radio wave and a monochromatic illumination in three-dimensional (3D) assumptions. The polarisation direction of the electromagnetic wave and power density are fixed. The electromagnetic wave is provided by electromagnetic emission sources such as the telecommunication, radio, or TV antennas. A PV system is installed in the vicinity of an electromagnetic emission source. The current produced by the PV cell is sensitive to electromagnetic field increase more than the electric voltage. The electromagnetic field causes the decomposition of the current into two components which are a transferred current and a leakage current. The transferred component provides the transmitted current to the external load while the leakage component gives the loss of the carrier charge into the junction. Consequently, this decomposition of the current shares the electric power in transferred electric power and leakage electric power. The transferred electric power is obtained only in the intermediate circuit, and the maximum power point (MPP) shifts to the short circuit situation as the junction dynamic velocity becomes the greatest. However, the leakage electric power corresponds to a loss of the minority carrier’s charge in the junction during the crossing of the junction. This loss causes a Joule heating effect of the junction. The heating of the junction causes the quality degradation of the PV cell mainly due to the electric component. The solar illumination wavelength is presenting the inversion phenomenon with the maximum of the electrical outputs of the silicon PV cell of around 0.70 μm which provides the greatest conversion efficiency. This value has been chosen for the modelling of the radio wave influence. Hence, the conversion efficiency increases when the PV system is far away from the electromagnetic emission source. PV system installation in the vicinity of an electromagnetic emission source is not advised.

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Effect of junction quality on the performance of a silicon solar cell

Cited by 10 publications

References 6 publications

Effect of Reverse Polarisation of an Electromagnetic Field on the Performance of a Silicon PV Cell

Effect of Reverse Polarisation of an Electromagnetic Field on the Performance of a Silicon PV Cell

Individual Energetic Processes Efficiencies in a Polycrystalline Silicon PV Cell Versus Electromagnetic Field

Investigation of the Polycrystalline Silicon PV Cell Efficiency in 3D Approximation versus Electromagnetic Field under Monochromatic Illumination

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