Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

Serge, Tchouadep Guy; Zouma, Bernard; Korgo, Bruno; Soro, Boubacar; Savadogo, Mahamadi; Zoungrana, Martial; Zerbo, Issa

doi:10.1155/2019/8306492

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…Thus, we can conclude that taking into account change in the wide of the SCR doesn't affect the conversion efficiency and that it is removal of majority charged carriers (Rc changes) which is responsible of the type-conversion of the base. Of course, the previous studies taking into account only change in diffusion length don't exhibit type conversion [15,16,17].…”

Section: Figure 4: Open Circuit Voltage Versus Fluencesmentioning

confidence: 94%

Behavior of Solar Cells Under 1 MeV Electrons Irradiation: Impact of Diffusion Length Reduction, Majority Carrier Removal and SCR Widening

Tchouadep,

Soro,

Tchedre

et al. 2024

Preprint

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When solar cells are used for space applications, there are exposed to different types of energetic particles such as protons and electrons. Those energetic particles create defects in the base of the solar cell and lead to the degradation of the performances of the solar cell. Three mainly phenomenon observed in silicon solar cells exposed to 1 MeV electron irradiation are decrease in diffusion length, removal of majority charge careers and enlargement of Space Charge Region (SCR). These three phenomenon lead to the type conversion of the base of solar cell and an anomalous behavior of the short-circuit current for a certain value of the fluences. In the present study, theoretical approach is used to investigate the impact of decrease in diffusion length, removal of majority charge careers and enlargement of SCR on the anomalous behavior of the short-circuit current and type conversion of the base. The electric parameters are studied under AM 1.5 for different fluences of 1 MeV electrons. It was found that, defects responsible for the anomalous behavior of the short-circuit current could appear for different values of the fluences and that, the type conversion of the base is caused by the removal of the majority charged carriers and decrease in diffusion length while the anomaly observed in the evolution of the short-circuit current is caused by the widening of the SCR.

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Section: Figure 4: Open Circuit Voltage Versus Fluencesmentioning

confidence: 94%

Behavior of Solar Cells Under 1 MeV Electrons Irradiation: Impact of Diffusion Length Reduction, Majority Carrier Removal and SCR Widening

Tchouadep,

Soro,

Tchedre

et al. 2024

Preprint

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“…Other authors are interested in the effect of light intensity on the performance of PV cells and observed that increasing the intensity of incident light improves performance of PV cell [2] [4]. In addition, studies on the effect of an external magnetic field [5] [6] and of a protons irradiation on the performance of PV cells [7] have been made and it appears that the Magnetic fields as well as protons degrade performances of PV cells. The multiplicity of sources of electromagnetic fields (development of telecommunication systems) and the operating conditions of PV cells under concentration of light (high temperatures)…”

Section: Introductionmentioning

confidence: 99%

Investigating the Impact of Base Heating and External Electric Field on PV Cell Performance under Intense Illumination

Soro,

Tchouadep,

Kpeli

et al. 2024

OJAppS

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The characterization of the performances of a PV cell is linked to intrinsic factors of this cell. It is therefore important for us to identify the favorable or unfavorable conditions that affect the performance of PV cells. It is from this perspective that it seems judicious to us to study the simultaneous influence of the heating of the base and an external electric field on the performance of a PV cell under intense illumination of 50 suns. Two phenomena contribute to the heating of the base of a PV cell which is heating due to the transfer by conduction of solar radiation energy received by the surface of the PV cell and the heat generated inside the PV cell by various phenomena linked to the movement of photogenerated charged carriers. In this study, we take into account the heating linked to the movement of the charged carriers in the base. After a mathematical modeling of the PV cell considered, some hypotheses are formulated and the expressions of the electrical parameters are established as a function of the electric field and base temperature. Subsequently, we use numerical simulation to highlight the behavior of theses parameters as a function of temperature and of the intensity of the electric field. The results show that for any given temperature, the orientation of the electric field as considered in our work improves the performance of the PV cell while high temperatures degrade these performances. Furthermore, the analysis of the curves shows that the harmful effect of temperature on the performance of a PV cell is more accentuated at large values of electric field.

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“…The relevance of studies of the effects of ionizing radiation on the properties of semiconductor materials and devices is increasing due to the increasing use of these processes in industrial technologies un-der controlled exposure, as well as the use of devices under uncontrolled environmental exposure [1][2][3][4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure

M.,

R.,

et al. 2023

semicond. sci. and inf. n.a.

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Nowadays, radiation engineering is a promising direction in the creation of semiconductor devices. The proton irradiation is used to controllably change the optical, electrical, recombination, mechanical and structural properties of the semiconductors. Low-energy protons make it possible to purposefully change material properties near the surface where the n+ -p junction is located. In this paper, the impact of low-energy protons on the electro physical parameters of n+ -p-p+ silicon photoelectric converters (SPC) is analyzed. The current-voltage characteristics and switching time of these SPCs are measured. The switching time is determined using rectangular bipolar voltage pulses with an amplitude of 10 mV, a frequency of 200 kHz, or a frequency of 1 MHz. A theoretical and experimental analysis of the obtained results is performed. The comparison of experimental data with the results of calculations shows that protons with an energy of 180 keV and a dose of 1015 cm–2 create two regions in the space charge region of the n+ -p junction with different switching times of 4.2 × 10–7 s and 5.5 × 10–8 s. SPC frequency characteristics have been improved by reducing the effective lifetime by 5-10 times. This effect can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

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Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

Cited by 4 publications

References 21 publications

Behavior of Solar Cells Under 1 MeV Electrons Irradiation: Impact of Diffusion Length Reduction, Majority Carrier Removal and SCR Widening

Behavior of Solar Cells Under 1 MeV Electrons Irradiation: Impact of Diffusion Length Reduction, Majority Carrier Removal and SCR Widening

Investigating the Impact of Base Heating and External Electric Field on PV Cell Performance under Intense Illumination

Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure

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