Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

Savadogo, Mahamadi; Soro, Boubacar; Konaté, Ramatou; Sourabié, Idrissa; Zoungrana, Martial; Zerbo, Issa; Bathiébo, Dieudonné Joseph

doi:10.4236/sgre.2020.115005

Cited by 4 publications

(14 citation statements)

References 15 publications

(18 reference statements)

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“…(1) The electrons and the holes mobility ( , np m ) coefficients are (Souza and Sousa, 2019;Dhar et al, 2005;Savadogo et al, 2020):…”

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

“…The index m is linked to the type of the doping material (type n or type p). In this work the n-type doping concentration of N d =10 18 cm −3 and p-type of N a =10 16 cm -3 are considered (Souza and Sousa, 2019;Dhar et al, 2005;Savadogo et al, 2020).…”

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

“…A represents the PV cell surface, C is the concentration ratio and in P the solar illumination power density which is assumed to be 2 1000 / in P W m  under standard air mass conditions AM 1.5 (Ravindra and Srivastava, 1979;Savadogo et al, 2020).…”

mentioning

confidence: 99%

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Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Savadogo¹,

Pegdwindé²,

Ouédraogo³

et al. 2022

Int. J. Phys. Sci.

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Studies on concentrated light influence do not take into account the effect of the heating and this proves to be harmful on photovoltaic parameters. The main purpose of this work is to study the effects of light concentration and the heating caused by this concentration on intrinsic properties and carrier density profile. A thermal model of the PV cell is proposed. By applying the power balance at the steady-state, the PV cell thermal equation is determined. The resolution of this equation leads to temperature profile which shows a rapid increase with light concentration. The mobility n  and diffusion n D coefficients of electrons increase to reach their maxima, respectively 2 1 1 max ( ) 1895,31 n cm V s    at C=6,77 Suns where temperature is T=430,92 K and 21 max ( ) 76,55 . n D cm s   at C= 12,59 Suns where temperature is T=508,24; before decreasing. However, for the holes these parameters decrease slowly with concentration increase. Silicon gap energy decreases while electrons intrinsic density increases with increasing concentration. The variations of these parameters are explained on one hand by their dependence on temperature but also by temperature profile with concentration. An electrical model of the PV cell under variable concentration is also proposed and from which the carrier's density is determined. It emerges that the carrier density increases significantly with concentration ratio. This fact is explained by the photo-generation increase with concentration. And also, by thermal generation increase linked to temperature increases with concentration increase. Results also show that carriers density is greater in the rear side compared to the zone near the junction in opposite to authors who did not take into account temperature effect and who showed that carriers density is greater at the illuminated face.

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“…(1) The electrons and the holes mobility ( , np m ) coefficients are (Souza and Sousa, 2019;Dhar et al, 2005;Savadogo et al, 2020):…”

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

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Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Savadogo¹,

Pegdwindé²,

Ouédraogo³

et al. 2022

Int. J. Phys. Sci.

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“…The electric power The electric power delivered by the PV cell is given by Equation ( 22) below [5] [6] [20] [21]:…”

Section: Determination Of Electric Parametersmentioning

confidence: 99%

“…The solar cell's conversion efficiency is calculated by using the following Equation (23) [5] [6] [20]:…”

Section: Determination Of Electric Parametersmentioning

confidence: 99%

Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

Savadogo¹,

Ouédraogo²,

Soro³

et al. 2022

EPE

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The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 10 13 cm −3 -10 16 cm −3 , a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.

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Phase-Dependent Properties of Manganese Oxides and Applications in Electrovoltaics

Batool,

Majid,

Ahmad

et al. 2024

ACS Omega

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This study reports first-principles predictions as well as experimental synthesis of manganese oxide nanoparticles under different conditions. The theoretical part of the work comprised density functional theory (DFT)-based calculations and first-principles molecular dynamics (MD) simulations. The extensive research efforts and the current challenges in enhancing the performance of the lithium-ion battery (LIB) provided motivation to explore the potential of these materials for use as an anode in the battery. The structural analysis of the synthesized samples carried out using X-ray diffraction (XRD) confirmed the tetragonal structure of Mn 3 O 4 on heating at 450 and 550 °C and the cubic structure of Mn 2 O 3 on heating at 650 °C. The structures are found in the form of nanoparticles at 450 and 550 °C, but at 650 °C, the material appeared in the form of a nanoporous structure. Further, we investigated the electrochemical functionality of Mn 2 O 3 and Mn 3 O 4 as anode materials for utilization in LIBs via MD simulations. Based on the investigations of their electrical, structural, diffusion, and storage behavior, the anodic character of Mn 2 O 3 and Mn 3 O 4 is predicted. The findings indicated that 10 lithium atoms adsorb on Mn 2 O 3 , whereas 5 lithium atoms adsorb on Mn 3 O 4 when saturation is taken into account. The storage capacities of Mn 2 O 3 and Mn 3 O 4 are estimated to be 1697 and 585 mAh g −1 , respectively. The maximum value of lithium insertion voltage per Li in Mn 2 O 3 is 0.93 and 0.22 V in Mn 3 O 4 . Further, the diffusion coefficient values are found as 2.69 × 10 −9 and 2.65 × 10 −10 m 2 s −1 for Mn 2 O 3 and Mn 3 O 4 , respectively, at 300 K. The climbing image nudged elastic band method (Cl-NEB) was implemented, which revealed activation energy barriers of Li as 0.30 and 0.75 eV for Mn 2 O 3 and Mn 3 O 4 , respectively. The findings of the work revealed high specific capacity, low Li diffusion energy barrier, and low open circuit voltage for the Mn 2 O 3 -based anode for use in LIBs.

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Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

Cited by 4 publications

References 15 publications

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

Phase-Dependent Properties of Manganese Oxides and Applications in Electrovoltaics

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