The emergence of two-dimensional transition metal dichalcogenide materials has sparked intense activity in valleytronics, as their valley information can be encoded and detected with the spin angular momentum of light. We demonstrate the valley-dependent directional coupling of light using a plasmonic nanowire-tungsten disulfide (WS) layers system. We show that the valley pseudospin in WS couples to transverse optical spin of the same handedness with a directional coupling efficiency of 90 ± 1%. Our results provide a platform for controlling, detecting, and processing valley and spin information with precise optical control at the nanoscale.
A transparent conducting film composed of regular networks of silver nanowires is obtained by combining a soft solution process (Tollens' reaction) and nanoimprint lithography. The solution-grown nanowire networks show a threefold higher conductivity than grids obtained by metal evaporation. This is due to the larger grain size in the solution-grown nanowires, which results in a strong reduction of electron scattering by grain boundaries.
A dip biosensor is realized by depositing metallic nanoparticles onto the tip of a cleaved optical fiber. Light coupled into the fiber interacts with the localized surface plasmons within the nanoparticles at the tip; a portion of the scattered light recouples into the optical fiber and is analyzed by a spectrometer. Characterization of the sensor demonstrates an inverse relationship between the sensitivity and the number of particles deposited onto the surface, with smaller quantities leading to greater sensitivity. The results obtained showed also that by depositing nanoparticles with distinct localized surface plasmon resonance signatures with limited overlap, as for the case of gold and silver nanospheres, a multiplexed dip biosensor can be realized by simply functionalizing the different nanoparticles with different antibodies after the fashion of an immunoassay. In this way different localized surface plasmons resonance bands responsive to different target analytes can be separately monitored, as further presented below, requiring a minimal quantity of reagents both for the functionalization process and for the sample analysis.
The epitaxial growth of monocrystalline
semiconductors on metal
nanostructures is interesting from both fundamental and applied perspectives.
The realization of nanostructures with excellent interfaces and material
properties that also have controlled optical resonances can be very
challenging. Here we report the synthesis and characterization of
metal–semiconductor core–shell nanowires. We demonstrate
a solution-phase route to obtain stable core–shell metal–Cu2O nanowires with outstanding control over the resulting structure,
in which the noble metal nanowire is used as the nucleation site for
epitaxial growth of quasi-monocrystalline Cu2O shells at
room temperature in aqueous solution. We use X-ray and electron diffraction,
high-resolution transmission electron microscopy, energy dispersive
X-ray spectroscopy, photoluminescence spectroscopy, and absorption
spectroscopy, as well as density functional theory calculations, to
characterize the core–shell nanowires and verify their structure.
Metal–semiconductor core–shell nanowires offer several
potential advantages over thin film and traditional nanowire architectures
as building blocks for photovoltaics, including efficient carrier
collection in radial nanowire junctions and strong optical resonances
that can be tuned to maximize absorption.
Coupling of surface waves in highly defined one-dimensional porous silicon photonic crystals for gas sensing applications, Applied Physics Letters, 2007; 91(24):241109-1-241109-3
Nanoscale materials
are promising for optoelectronic devices because
their physical dimensions are on the order of the wavelength of light.
This leads to a variety of complex optical phenomena that, for instance,
enhance absorption and emission. However, quantifying the performance
of these nanoscale devices frequently requires measuring absolute
absorption at the nanoscale, and remarkably, there is no general method
capable of doing so directly. Here, we present such a method based
on an integrating sphere but modified to achieve submicron spatial
resolution. We explore the limits of this technique by using it to
measure spatial and spectral absorptance profiles on a wide variety
of nanoscale systems, including different combinations of weakly and
strongly absorbing and scattering nanomaterials (Si and GaAs nanowires,
Au nanoparticles). This measurement technique provides quantitative
information about local optical properties that are crucial for improving
any optoelectronic device with nanoscale dimensions or nanoscale surface
texturing.
The high stability of Salonen’s thermally carbonized porous silicon (TCPSi) has attracted attention for environmental and biochemical sensing applications, where corrosion-induced zero point drift of porous silicon-based sensor elements has historically been a significant problem. Prepared by the high temperature reaction of porous silicon with acetylene gas, the stability of this silicon carbide-like material also poses a challenge—many sensor applications require a functionalized surface, and the low reactivity of TCPSi has limited the ability to chemically modify its surface. This work presents a simple reaction to modify the surface of TCPSi with an alkyl carboxylate. The method involves radical coupling of a dicarboxylic acid (sebacic acid) to the TCPSi surface using a benzoyl peroxide initiator. The grafted carboxylic acid species provides a route for bioconjugate chemical modification, demonstrated in this work by coupling propylamine to the surface carboxylic acid group through the intermediacy of pentafluorophenol and 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride (EDC). The stability of the carbonized porous Si surface, both before and after chemical modification, is tested in phosphate buffered saline solution and found to be superior to either hydrosilylated (with undecylenic acid) or thermally oxidized porous Si surfaces.
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