Baolei Cheng scite author profile

Abstract-Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes.

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340-GHz 3-D Imaging Radar With 4Tx-16Rx MIMO Array

Cheng

Cui

Lü

et al. 2018

IEEE Trans. THz Sci. Technol.

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Parallel construction of independent spanning trees and an application in diagnosis on Möbius cubes

et al. 2013

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Sub-0.18 μm SOI MOSFETs using lateral asymmetric channel profile and Ge pre-amorphization salicide technology

Cheng¹,

Rao²,

Woo³

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Design considerations of high-κ gate dielectrics for sub-0.1-μm MOSFET's

Cheng

Cao

Voorde

et al. 1999

IEEE Trans. Electron Devices

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Baolei Cheng

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Fast Three-Dimensional Image Reconstruction of a Standoff Screening System in the Terahertz Regime

Overview of Extended Finite Element Method

Optimization and realization of sub-100-nm channel length single halo p-MOSFETs

340-GHz 3-D Imaging Radar With 4Tx-16Rx MIMO Array

Parallel construction of independent spanning trees and an application in diagnosis on Möbius cubes

Sub-0.18 μm SOI MOSFETs using lateral asymmetric channel profile and Ge pre-amorphization salicide technology

Design considerations of high-κ gate dielectrics for sub-0.1-μm MOSFET's

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