This paper aims to design and simulate a compact dynamic random access memory (DRAM) cell using two-channel spatial wavefunction switched (SWS) field-effect transistor (FET) and two capacitors. One unit of a SWSFET based DRAM cell stores 2-bits, which reduces the overall cell area by 50% as compared to a conventional 1-bit DRAM cell. SWSFETs have two or more vertically stacked quantum well channels as the transport layer between source and drain. In a two quantum channel n-SWSFET, as the gate voltage is raised above threshold, electrons appear in the lower quantum well W2 and this inversion channel connects Source S2 to drain D2. As the gate voltage is further increased, electrons transfer to upper quantum well W1 and now source S1 and drain D1 are connected electrically. Spatial location of electrons allows us to encode as 4 logic states: no electrons 00, electrons in W2 01, electrons is both wells 10 and electrons in well W1. This property of the SWSFET has been shown to implement multi-valued logic circuits. A SWSFET may have 2-4 sources and drains independently operated or connected together depending upon the logic circuit implementation.
This paper presents the design and simulation of static random access memory (SRAM) using two channel spatial wavefunction switched field-effect transistor (SWS-FET), also known as a twin-drain metal oxide semiconductor field effect transistor (MOS-FET). In the SWS-FET, the channel between source and drain has two quantum well layers separated by a high band gap material between them. The gate voltage controls the charge carrier concentration in the quantum well layers and it causes the switching of charge carriers from one channel to other channel of the device. The standard SRAM circuit has six transistors (6T), two p-type MOS-FET and four n-type MOS-FET. By using the SWSFET, the size and the number of transistors are reduced and all of transistors are n-channel SWS-FET. This paper proposes two different models of the SWS-FET SRAM circuits with three transistors (3T) and four transistors (4T) also addresses the stability of the proposed SWS-FET SRAM circuits by using the N-curve analysis. The proposed models are based on integration between Berkeley Shortchannel IGFET Model (BSIM) and Analog Behavioral Model (ABM), the model is suitable to investigate the gates configuration and transient analysis at circuit level.
In-depth understanding of the pollution problems such as dry bands and the polymeric aging process requires better determination of electric field strength and its distribution over the polymeric surface. To determine the electric field distribution over the insulator surface, this research proposes utilizing a novel approach model based on nonlinear electrical characteristics derived from experimental results for polluted polymer insulators. A case study was carried out for a typical 11 kV polymeric insulator to underline the merits of this new modeling approach. The developments of the proposed pollution model and the subsequent computational works are described in detail. The study is divided into two main stages; laboratory measurements and computer simulations. In the first stage, layer conductance tests were carried out to develop nonlinear field-dependent conductivity for the pollution modeling. In the second part, equipotential and electric field distributions along the leakage were computed using the finite element method (FEM). Comparative field studies showed that the simulation using the proposed dynamic pollution model results in more detailed and realistic field profiles around insulators. This may be useful to predict the formation of dry bands and the initiation of electrical discharges on the polymeric surface.
<span>The main challenges of today’s global health care system are to reach to strong healthcare system, to provide effective methods to eliminate the increase in the number of dead and infected with virus of COVID-19. Therefore, during the last few months, the great importance and efficacy of a variety of engineering techniques that have greatly contributed in curbing the spread of the COVID-19, and evenly help to eliminate it according to recent scientific studies was highly prominent. Among these promising technologies in this field we mention, but not limited to, the use of ultraviolet (UV) rays to disinfection of air and surfaces. In addition, thermal imaging technology, which was employed using infrared radiation for monitoring people in crowded areas and human groups to determine who have abnormal temperatures, so that all preventive measures are taken. Robots have also been used and harnessed to perform many tasks that limit the spread of the virus and maintain the integrity of the human element. Last but not least, facial recognition techniques have also been used to limit the spread of this pandemic. Ultraviolet radiation is one of physical therapy modalities that can be used to increase the efficiency of human immune system to fight the virus. In conclusion UV radiation, infrared thermal imaging, robotics, AFR technologies are now widely used to reduce the spread of this virus and manage the outbreak.</span>
This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.
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