Twin Drain Quantum Well/Quantum Dot Channel Spatial Wave-Function Switched (SWS) FETs for Multi-Valued Logic and Compact DRAMs

Abstract

This paper aims to design and simulate a compact dynamic random access memory (DRAM) cell using two-channel spatial wavefunction switched (SWS) field-effect transistor (FET) and two capacitors. One unit of a SWSFET based DRAM cell stores 2-bits, which reduces the overall cell area by 50% as compared to a conventional 1-bit DRAM cell. SWSFETs have two or more vertically stacked quantum well channels as the transport layer between source and drain. In a two quantum channel n-SWSFET, as the gate voltage is raised above threshold, electrons appear in the lower quantum well W2 and this inversion channel connects Source S2 to drain D2. As the gate voltage is further increased, electrons transfer to upper quantum well W1 and now source S1 and drain D1 are connected electrically. Spatial location of electrons allows us to encode as 4 logic states: no electrons 00, electrons in W2 01, electrons is both wells 10 and electrons in well W1. This property of the SWSFET has been shown to implement multi-valued logic circuits. A SWSFET may have 2-4 sources and drains independently operated or connected together depending upon the logic circuit implementation.

Surface Plasmon Lasers: Quantum Dot

“…They also examined the efficiency of a minoring laser device and expected a limit lasing present (density) of around 550 nA (1 kA cm-2). Remarkably, it is calculated that the obtained SPP near its power asymptote is much bigger than the content obtained from the method dressed by materials because the method's power speed is low in this area (Salama et al, 2019).…”

“…The prism during pumping in the absence of the probe and observed characteristics that they attributed to the amplified spontaneous emission of SPPs (ASE-SPPs). They pointed out that significant gain reduction may occur because of ASE-SPPs, and estimated a ~30% increase in SPP propagation length due to stimulated emission (Salama et al, 2019).…”

“…A grating coupler presents a regular perturbation of corrugations, lumps on cuts to the steel. The part of the prism or grating is to improve the in-plane strength of TM-polarized occurrence mild such that it suits that of the SPP (Salama et al, 2019).…”

“…Less material gain is required to amplify long-range SPSs calculated that the material gain required for lossless predicted that a material gain of 400 cm 1 was required for lossless 4,000 and threshold gains of around 200 cm 1 were predicted at = 1,400 nm for RRSP whispering gallery modes in metal GaAs the gain required for lossless propagation would be underestimated (Salama et al, 2019). Supposing R6G in solution as the obtain method, lossless LRSPP reproduction at = 560 nm was expected under poor moving ( = 532 nm, ~200 kW cm 2) of a moderate dye focus (N = 1.8 1018 cm 3) for a 20-nm-thick gold movie protected by the medium40 recommended that a grating assisting LRSPPs would function as a plasmatic band gap laser device if a obtain method whose optimum exhaust is within the bandgap is presented.…”

Nanotechnology and Quantum Dot Lasers

“…A higher attribute heat range of the limit present solidity was revealed originally up to 150 K. The limit present solidity stayed relatively great at 70 degrees, and the gadgets usually lase via QD thrilled declares at short and average hole measures. Another accomplishment came from implementing top to bottom combined QDs to heterostructure laser treatment to get over obtain vividness in QDs [Salama, 2019]. This led to constant ground-state lasing in QDs at very low limit present densities.…”