Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. Preparation of the free-standing HVPE-GaN crystal by slicing and structural and optical quality of the resulting wafer are presented.

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Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is overviewed. Morphology of the crystal growing surface at the beginning of the crystallization process and at the end of it is presented. Based on these results a rough growth model is proposed. Smooth GaN layers up to 1 mm thick and of a high purity, excellent crystalline quality, without any cracks, and with a low dislocation density are grown. Preparation of the free-standing HVPE-GaN crystals by slicing as well as structural, electrical and optical qualities of the resulting wafers are reported and discussed.

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