Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Amilusik, Mikolaj; Sochacki, Tomasz; Łucznik, B.; Fijałkowski, Michał; Smalc-Koziorοwska, Julita; Weyher, J.L.; Teisseyre, H.; Sadovyi, B.; Boćkowski, Michał; Grzegory, I.

doi:10.1016/j.jcrysgro.2014.06.012

Cited by 32 publications

(20 citation statements)

References 18 publications

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“…This indicates the free carrier concentration to be higher than in the Am‐GaN seed and the HVPE‐GaN layer grown in the c‐direction. According to Amilusik et al , due to high oxygen concentration, the free carrier concentration in GaN grown in the non‐polar and semi‐polar directions can be of the order of 10 19 cm −3 . Obviously, according to Krysko et al and due to high free carrier concentration, the a and c lattice constants of this material were much larger than the lattice constants of the Am‐GaN seed or the HVPE‐GaN layer grown on it.…”

Section: Discussionmentioning

confidence: 99%

Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed

Sochacki

Amilusik

Fijałkowski

et al. 2014

Physica Status Solidi (b)

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It is demonstrated in this paper that 1.9-mm-thick gallium nitride grown by Hydride Vapor Phase Epitaxy (HVPE) on an ammonothermally grown GaN seed can reproduce the structural, in terms of defects, properties of the seed. The etch pit density and its correlation to the threading dislocation density in the ammonothermal GaN substrate and the HVPEGaN layer is presented and analyzed. However, it has recently been observed that for HVPE-GaN thicker than 2 mm some additional defects are formed in the new grown material. Therefore, three HVPE growth runs were performed in the same experimental conditions, using three structurally identical ammonothermally grown GaN seeds of different thicknesses. The influence of the thickness of the seeds on the crystallization process and the properties of the HVPE-GaN layers is shown and discussed.

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Section: Discussionmentioning

confidence: 99%

Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed

Sochacki

Amilusik

Fijałkowski

et al. 2014

Physica Status Solidi (b)

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“…In the presence of several growth facets this leads to varying impurity concentration between different growth regions. Especially the incorporation efficiency of oxygen has been reported to be strongly dependent on the growth direction in HVPE and MOVPE grown GaN . In similar growth conditions the oxygen concentration of HVPE GaN grown in nonpolar and semipolar directions was found to be up to two orders of magnitude higher compared with GaN grown in the c‐ direction.…”

Section: Defects In Ammonothermal Gallium Nitridementioning

confidence: 97%

“…Especially the incorporation efficiency of oxygen has been reported to be strongly dependent on the growth direction in HVPE and MOVPE grown GaN. [76][77][78] In similar growth conditions the oxygen concentration of HVPE GaN grown in nonpolar and semipolar directions was found to be up to two orders of magnitude higher compared with GaN grown in the c-direction. The oxygen incorporation is expected to depend on the surface density of nitrogen, resulting in high incorporation efficiency on N-rich planes such as N-polar {000-1}, {11-22}, {10-11} and {000-1} and low incorporation efficiency on N-poor planes such as Ga-polar {0001} and {11-20}.…”

Section: Growth Regions In Ammonothermal Growthmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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“…The thickness dependence for the {20–21} and {20–2–1} GaN layers on GaN substrates is described well by the fitting curves with K = 8 and 50 nm, respectively. As the plot clearly shows, the dark‐spot density in the {20–2–1} GaN layer decreased more rapidly than that in the {20–21} GaN layer . There is little difference between the rates of reduction in dark‐spot density for the {20–21} GaN on the template and on the {20–21} GaN substrate.…”

Section: Resultsmentioning

confidence: 95%

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Hashimoto

Yamane

Okada

et al. 2015

Physica Status Solidi (b)

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In this article, we present a semipolar {20–21} GaN layer and {20–2–1} GaN layer for large GaN substrates. The {20–21} GaN layer was fabricated on {22–43} patterned sapphire substrates (PSSs) by metal‐organic vapor‐phase epitaxy (MOVPE) and hydride vapor‐phase epitaxy (HVPE). We found that the surface roughening and crack generation during the HVPE growth were suppressed by the formation of SiO2‐striped masks parallel to the c‐axis on the MOVPE‐grown {20–21} GaN template. Furthermore, we demonstrated millimeter‐thick crystal growth on a {20–21} GaN layer and a {20–2–1} GaN layer on a GaN substrate using HVPE. The dark‐spot density in the {20–2–1} GaN layer was approximately 9.6 × 106 cm−2 for 960 min growth. The dark‐spot density in the {20–2–1} GaN layer decreased more rapidly than that in the {20–21} GaN layer as growth thickness increased.

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Cited by 32 publications

References 18 publications

Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed

Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed

Defects in Single Crystalline Ammonothermal Gallium Nitride

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

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