Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask

Amilusik, Mikolaj; Sochacki, Tomasz; Łucznik, B.; Boćkowski, Michał; Sadovyi, B.; Presz, A.; Dzięcielewski, Igor; Grzegory, I.

doi:10.1016/j.jcrysgro.2013.06.005

Cited by 24 publications

(10 citation statements)

References 15 publications

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“…Typical time of such crystallization run varies from 8 to 10 hours. Due to self-separation from the sapphire, a 2-inch free standing HVPE-GaN crystal can be obtained 15 . On the other hand, FS HVPE-GaN can be also obtained by using ammonothermally grown GaN as seed (Am-GaN) 16 .…”

Section: Methodsmentioning

confidence: 99%

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

Boćkowski

2014

SPIE Proceedings

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The use of GaN crystals grown by three methods (and their combinations): Hydride Vapor Phase Epitaxy (HVPE), high nitrogen pressure solution (HNPS) and ammonothermal method for optoelectronic (laser diodes) and electronic (transistors) devices is presented. After a brief review on the development of the three crystallization methods, the GaN crystals' uniform and unique properties, which allow to use them as substrates for building devices, are shown. The Metal Organic Vapor Phase Epitaxy (MOCVD) and Molecular Beam Epitaxy (MBE) technologies for growing the nitride quantum nanostructures as well as the structures' properties and processing of devices are demonstrated. Future challenges and perspectives for application of bulk GaN as substrates in building quantum nanostructures for some electronic and optoelectronic devices are discussed.

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Section: Methodsmentioning

confidence: 99%

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

Boćkowski

2014

SPIE Proceedings

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“…[37][38][39]. Free-standing (F-S) HVPE-GaN crystals that are 2 inches and up to 1 mm thick are obtained using MOCVD-GaN/sapphire templates as seeds; for details, see Refs.…”

Section: Hvpe-gan Seedsmentioning

confidence: 99%

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Ehrentraut

Boćkowski

2015

Handbook of Crystal Growth

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“…The high process temperature, together with the chemically aggressive substances involved in the HVPE process, makes the design of the reactor a challenging task. Gallium, ammonia, and hydrogen chloride react to some extent with most heat-resistant materials, including quartz, often used in HVPE reactor design [5][6][7][8][9][10][11][12][13][14][15], which leads to degradation of reactor parts and unintended doping of the grown crystal. The exclusion of quartz from the hot zone of the reactor is known to reduce the level of unintentional doping significantly [1,16].…”

Section: Introductionmentioning

confidence: 99%

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Voronenkov

Bochkareva

Zubrilov

et al. 2019

Physica Status Solidi (a)

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An hydride vapor-phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.

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Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask

Cited by 24 publications

References 15 publications

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

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