Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Voronenkov, V. V.; Bochkareva, N. I.; Zubrilov, A. S.; Lelikov, Yu. S.; Gorbunov, R. I.; Latyshev, Philipp; Shreter, Yu. G.

doi:10.1002/pssa.201900629

Cited by 8 publications

(3 citation statements)

References 54 publications

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“…They used this 3D structure to relieve the growth stress and they consequently obtained GaN boules about 3 mm thick without any cracks, even on GaN/sapphire templates. [18][19][20] Inspired by their report, we developed our "maskless-3D method" which effectively reduces the TDD of the GaN crystal. The process flow is as follows.…”

Section: Introductionmentioning

confidence: 99%

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

Yoshida

Shibata

2020

Jpn. J. Appl. Phys.

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To produce high-quality GaN (0001) substrates with a low threading dislocation density (TDD) and a small off-angle variation, we have developed a technique named the “maskless-3D method.” This method, which is applied during GaN boule growth by hydride vapor phase epitaxy (HVPE), induces three-dimensional (3D) growth on a normal GaN (0001) seed substrate. We showed that by an appropriate choice of HVPE conditions, and without using a mask, the 3D growth shape was controlled to eliminate the c-plane and thereby suppress the propagation of dislocations from the seed. Subsequently, two-dimensional (2D) growth was carried out on the 3D structure. This 2D growth area was machined to produce a 2 inch GaN substrate with a TDD of about 4 × 105 cm−2 and an off-angle variation of 0.05°. We also confirmed that it was possible to insert the 3D growth area twice, thereby further reducing the TDD to 104 cm−2.

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Section: Introductionmentioning

confidence: 99%

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

Yoshida

Shibata

2020

Jpn. J. Appl. Phys.

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“…[35] However, in HVPE at a temperature of 850 C, the partial pressures of GaCl 3 and Ga 2 Cl 6 are much lower than the partial pressure of GaCl. [36] Thus, we have assumed that GaCl is the only gaseous species carrying Ga. For calculations of gas transport properties such as dynamic viscosity and diffusion, we have used kinetic gas theory and Maxwell-Stefan diffusion model. The used Lennard-Jones parameters are shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Doping of β‐Ga₂O₃ Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

Pozina

Hsu

Abrikossova

et al. 2021

Physica Status Solidi (a)

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Development of ultrawide bandgap semiconductor β‐Ga2O3 is important considering its great potential for high‐power high‐voltage electronic applications. Halide vapor‐phase epitaxy is used to produce Zn‐doped β‐Ga2O3 layers on sapphire (0001). Zn doping concentrations is estimated to be in the range between 6 × 1018 and 2.5 × 1020 cm−3. As a precursor for Zn acceptor dopant, ZnCl2 formed by flowing of diluted Cl2 gas over a melt of metallic Zn is used. Modeling of the growth chamber and calculations of precursor concentrations inside the growth zone is carried out to optimize process parameters. The Zn doping is not affecting the optical emission properties; however, growth under oxygen‐rich conditions and formation of crystalline particles on the layer surface are factors responsible for modification of β‐Ga2O3 luminescence spectrum. It is observed that the UV band at 3.35 eV vanishes, whereas relative intensities of the blue and green bands at 2.4–2.8 eV increase.

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“…Polycrystalline GaN material was synthesized for the first time around 1930 by flowing ammonia (NH 3 ) over liquid gallium (Ga), at around 1000 • C [1]. The first single crystalline GaN was epitaxially grown in 1969 by Maruska and Tietjen [2] by hydride vapor phase epitaxy (HVPE) on a sapphire substrate [3]. In this process, gaseous hydrogen chloride initially reacts with liquid Ga at a temperature of approximately 880 • C to form gallium chloride (GaCl 3 ).…”

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

et al. 2022

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Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in medical and material sciences. Existing technologies face problems, such as sensitivity or resilience. Here, we describe a novel class of X-ray sensors based on GaN thin film and GaN/AlGaN high-electron-mobility transistors (HEMTs), a promising enabling technology in the modern world of GaN devices for high power, high temperature, high frequency, optoelectronic, and military/space applications. The GaN/AlGaN HEMT-based X-ray sensors offer superior performance, as evidenced by higher sensitivity due to intensification of electrons in the two-dimensional electron gas (2DEG), by ionizing radiation. This increase in detector sensitivity, by a factor of 104 compared to GaN thin film, now offers the opportunity to reduce health risks associated with the steady increase in CT scans in today’s medicine, and the associated increase in exposure to harmful ionizing radiation, by introducing GaN/AlGaN sensors into X-ray imaging devices, for the benefit of the patient.

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Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Cited by 8 publications

References 54 publications

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

Doping of β‐Ga₂O₃ Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

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Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Cited by 8 publications

References 54 publications

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

Doping of β‐Ga2O3 Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

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Doping of β‐Ga₂O₃ Layers by Zn Using Halide Vapor‐Phase Epitaxy Process