The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%-25% ͑grown with metal-organic chemical-vapor deposition͒. A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.

The ongoing battle against current and rising viral infectious threats has prompted increasing effort in the development of vaccine technology. A major thrust in vaccine research focuses on developing formulations with virus-like features towards enhancing antigen presentation and immune processing. Herein, a facile approach to formulate synthetic virus-like particles (sVLPs) is demonstrated by exploiting the phenomenon of protein corona formation induced by the high-energy surfaces of synthetic nanoparticles. Using an avian coronavirus spike protein as a model antigen, sVLPs were prepared by incubating 100 nm gold nanoparticles in a solution containing an optimized concentration of viral proteins. Following removal of free proteins, antigen-laden particles were recovered and showed morphological semblance to natural viral particles under nanoparticle tracking analysis and transmission electron microscopy. As compared to inoculation with free proteins, vaccination with the sVLPs showed enhanced lymphatic antigen delivery, stronger antibody titers, increased splenic T-cell response, and reduced infection-associated symptoms in an avian model of coronavirus infection. Comparison to a commercial whole inactivated virus vaccine also showed evidence of superior antiviral protection by the sVLPs. The study demonstrates a simple yet robust method in bridging viral antigens with synthetic nanoparticles for improved vaccine application; it has practical implications in the management of human viral infections as well as in animal agriculture.

Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light emission applications, in particular for the emission of single photons on demand. However, the preparation of QDs emitting photons with predefined and deterministic polarization vectors has proven arduous. Access to linearly polarized photons is essential for various applications. In this report, a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids, by which the predefined elongation determines the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters, with a controlled polarization direction for each individual emitter. Keywords: GaN; InGaN; photoluminescence; polarized emission; quantum dot INTRODUCTION Quantum dots (QDs) have validated their important role in current optoelectronic devices and they are also seen promising as light sources for quantum information applications. An improved efficiency of laser diodes and light-emitting diodes can be achieved by the incorporation of QDs ensembles in the optically active layers.1 In addition, the proposed quantum computer applications rely on photons with distinct energy and polarization vectors, which can be seen as the ultimate demand on photons emitted from individual QDs.2 A common requirement raised for several optoelectronic applications, e.g., liquid-crystal displays, three-dimensional visualization, (bio)-dermatology 3 and the optical quantum computers, 4 is the need of linearly polarized light for their operation. For existing applications, the generation of linearly polarized light is obtained by passing unpolarized light through a combination of polarization selective filters and waveguides, with an inevitable efficiency loss as the result. These losses can be drastically reduced by employment of sources, which directly generate photons with desired polarization directions.Conventional QDs grown via the Stranski-Krastanov (SK) growth mode are typically randomly distributed over planar substrates and possess different degrees of anisotropies. The anisotropy in strain field and/or geometrical shape of each individual QD determines the polarization performance of the QD emission. Accordingly, a cumbersome post-selection of QDs with desired polarization properties among the randomly distributed QDs is required for device integration.

Fabrication of single InGaN quantum dots (QDs) on top of GaN micropyramids is reported. The formation of single QDs is evidenced by showing single sub-millielectronvolt emission lines in microphotoluminescence (μPL) spectra. Tunable QD emission energy by varying the growth temperature of the InGaN layers is also demonstrated. From μPL, it is evident that the QDs are located in the apexes of the pyramids. The fact that the emission lines of the QDs are linear polarized in a preferred direction implies that the apexes induce unidirected anisotropic fields to the QDs. The single emission lines remain unchanged with increasing the excitation power and/or crystal temperature. An in-plane elongated QD forming a shallow potential with an equal number of trapped electrons and holes is proposed to explain the absence of other exciton complexes.

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A silicon‐containing benzoxazine BATMS‐Bz (1,3‐bis(3‐aminopropyl)tetramethyldisiloxane‐benzoxazine) was used for polybenzoxazine modification by means of formation of benzoxazine copolymers with 3,4‐dihydro‐3‐phenyl‐2H‐1,3‐benzoxazine (Ph‐Bz) and 3‐furfuryl‐3,4‐dihydro‐2H‐1,3‐benzoxazine (F‐Bz), respectively. Ph‐Bz/BATMS‐Bz copolymers showed a positive deviation due the presence of intermolecular hydrogen bonding. However, this effect was not observed with F‐Bz/BATMS‐Bz copolymers. Meanwhile, BATMS‐Bz incorporation exhibited significant effect on toughening polybenzoxazines. It is therefore demonstrated that BATMS‐Bz is a high performance modifier to simultaneously enhance the Tg and toughness of polybenzoxazines. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1007–1015, 2007

UV Raman scattering studies show longitudinal optical (LO) mode up to fourth order in wurtzite GaN nanowire system. Fröhlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ∼3nm.

Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have been widely reported. However, their physical interpretations have not been well discussed yet. Based on wavelength-dependent and temperature-varying time-resolved PL measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in such an indium aggregated structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. Three samples of the same quantum well geometry but different nominal indium contents, and hence different degrees of indium aggregation and carrier localization, were compared. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. In samples of higher indium contents, more complicated carrier localization potential structures led to enhanced carrier transport activities. Free exciton behaviors of the three samples at high temperatures are consistent with previously reported transmission electron microscopy results.