Multi feed seed (MFS) high pressure crystallization of 1–2in GaN

Boćkowski, Michał; Grzegory, I.; Łucznik, B.; Sochacki, Tomasz; Nowak, G.; Sadovyi, B.; Strąk, Paweł; Kamler, G.; Litwin‐Staszewska, E.; Porowski, S.

doi:10.1016/j.jcrysgro.2011.12.013

Cited by 32 publications

(11 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar single longitudinal mode characteristics has also been observed in the spectral output of other AlGaInN laser diodes and was explained by surface roughness inadvertently introduced during growth 4 and that the single mode is stabalised by longitudinal mode competition caused by optical gain saturation 5 . Similarly we observe a surface topology of the order of ~10nm in height and a periodicity of 100nm, eventhough the epitaxy growth is done on very low defectivity (<5x10 4 cm -2 ) GaN substrates with a flatness of <0.1nm 6 , the surface topology features appear inadvertantly in the last epitaxy layer of growth.…”

supporting

confidence: 57%

AlGaInN laser diode technology for systems applications

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

supporting

confidence: 57%

AlGaInN laser diode technology for systems applications

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…Similar single longitudinal mode characteristics has also been observed in the spectral output of other AlGaInN laser diodes and was explained by surface roughness inadvertently introduced during growth 3 and that the single mode is stabalised by longitudinal mode competition caused by optical gain saturation 4 . Similarly we observe a surface topology of the order of ~10nm in height and a periodicity of 100nm 5 , eventhough the epitaxy growth is done on very low defectivity (<5x10 4 cm -2 ) GaN substrates with a flatness of <0.1nm 6 , the surface topology features appear inadvertantly in the last epitaxy layer of growth. The dominant single mode characteristic is observe in all our AlGaInN LD devices at moderate optical powers up to ~25mW.…”

supporting

confidence: 56%

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

et al. 2016

View full text Add to dashboard Cite

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100's of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwater.

show abstract

“…Recently, single crystal growth of large area, very low dislocation density and uniform GaN substrates are grown using a combination of high temperature and high pressure has been realised, enabling a range of AlGaInN laser technology to be developed 1,2 . A typical AlGaInN laser diode epitaxy structure grown by MOCVD consists of; i) 0.8 µm Al 0.08 Ga 0.92 N lower cladding layer, ii) 50 nm GaN lower waveguide layer, iii) 50 nm In 0.02 Ga 0.98 N injection layer, iv) In x Ga 1-x N/In 0.02 Ga 0.98 N quantum wells x3 (3.5/9 Å) -the indium composition x (x=0.05-0.2) and well thickness can be varied to change the emission wavelength, v) 20 nm Al 0.2 Ga 0.8 N Electron Blocking Layer, vi) 80 nm GaN waveguide and vii) 350 nm Al 0.08 Ga 0.92 N upper cladding.…”

Section: Resultsmentioning

confidence: 99%

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

Najda

Perlin

Suski

et al. 2016

Free-Space Laser Communication and Atmospheric Propagation XXVIII

View full text Add to dashboard Cite

Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology for laser sources from the u.v. to visible and is a potential key enabler for new system applications such as free-space (underwater & air bourne links) and plastic optical fibre telecommunications. We measure visible light (free-space and underwater) communications at high frequency (up to 2.5 Gbit/s) and in plastic optical fibre (POF) using a directly modulated GaN laser diode.

show abstract

Multi feed seed (MFS) high pressure crystallization of 1–2in GaN

Cited by 32 publications

References 5 publications

AlGaInN laser diode technology for systems applications

AlGaInN laser diode technology for systems applications

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

Contact Info

Product

Resources

About