AlGaInN laser diode technology for systems applications

Najda, Stephen P.; Perlin, P.; Suski, T.; Marona, Ł.; Boćkowski, Michał; Leszczyński, M.; Wiśniewski, P.; Czernecki, R.; Kucharski, Robert; Targowski, G.; Watson, Scott; Kelly, Anthony E.

doi:10.1117/12.2207231

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…With this work the development of the electronic devices of AlGaN on ammono-GaN substrates has been started. So far, we are using them for commercial production of LDs and LD arrays [15,16]. Due to the high uniformity of the GaN crystals (this is not the case for other GaN manufacturers), we are able to construct large area opto-electronic devices that are able to deliver a few watts of optical power in cw operation.…”

Section: Discussionmentioning

confidence: 99%

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Kruszewski¹,

Prystawko²,

Kašalynas³

et al. 2014

Semicond. Sci. Technol.

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The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4 cm −2 and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices-Schottky diodes and transistors-were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate.

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Section: Discussionmentioning

confidence: 99%

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Kruszewski¹,

Prystawko²,

Kašalynas³

et al. 2014

Semicond. Sci. Technol.

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“…InGaN/GaN-based visible light laser diodes, due to their high brightness and high efficiency [ 1 ], are the subject of many important applications in solid-state lighting [ 2 , 3 ], display applications [ 2 , 4 ], car headlights [ 5 , 6 ], projectors [ 7 , 8 ], atomic clocks [ 9 , 10 ], and laser-based high-density storage systems [ 11 ]. Moreover, these devices are crucial components for emerging visible light communication systems [ 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

et al. 2023

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In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in the form of 45° inclined planes. They are placed in the close vicinity of etched vertical cavity mirrors that are fabricated by Reactive Ion Beam Etching. The principle of operation of this device is confirmed experimentally; however, we observed an unexpected angular distribution of reflected rays for the angles lower than 45°, which we associate with the light diffraction and interference between the vertical and deflecting mirrors. The presented solution offers the maturity of edge-emitting laser technology combined with versatility of surface-emitting lasers, including on-wafer testing of emitters and addressability of single light sources.

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Spectral-temporal dynamics of (Al,In)GaN laser diodes

et al. 2020

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(Al,In)GaN laser diodes have various relevant applications, especially in projection systems for virtual and augmented reality devices and in optical communication, all requiring fast modulation. This corresponds to pulses in the nanosecond to microsecond range, where a rich longitudinal mode dynamics occurs. We investigate this spectral-temporal dynamics experimentally with a streak camera system and simulate it using a longitudinal multi-mode rate equation model. We observe an interplay of effects, which have been observed selectively, such as relaxation oscillations, mode competition and inhomogeneous pumping of multiple quantum wells. A mechanism is included in the simulations to model the red-shift of the gain spectrum due to the carrier density in the quantum wells exceeding threshold density, which is amplified by inhomogeneous pumping. Mode competition leads to spectral cycles of the active mode with a noticeable jitter, which is observed in single pulse measurements in comparison to multi pulse averaged measurements where blurring occurs. Here, some statistical behavior as well as repeating patterns are investigated at the same effect. Also thermal effects as laser diode self-heating are discussed and have been measured over six orders of magnitude in time.

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AlGaInN laser diode technology for systems applications

Cited by 4 publications

References 12 publications

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

Spectral-temporal dynamics of (Al,In)GaN laser diodes

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