The preparation and characterization of a reference mirror of protected aluminum (Al) is reported. The mirror is made of 50-60-nm-thick Al film, coated with several-nanometer-thick A12O5 and 30-nm-thick film of AIN. The mirror characterization is based on reliable and precise reflectance measurements relative to a silicon- (Si-) wafer reference mirror. The simple phenomenological Drude-Lorentz model is applied for modeling the dispersion relations n(lambda) and k(lambda) of the Al film. The reflection of the protected Al mirror is determined in the 400-800-nm spectral range with accuracy better than 0.01 for p- and s-polarized light at angles of incidence from 0 degrees to 70 degrees. The accuracy has been confirmed with an evaporated thin silver film with known n(lambda), k(lambda), and d derived by photometric measurements at normal light incidence.
We have studied one-dimensional (1D) relief metalized subwavelength gratings, which support resonant optical transmission. We have used pregrooved DVD stampers, metalized with a thin Al layer. The sensitivity of resonant transmission of the gratings to the cladding environment was investigated by the help of matching fluids. We have shown that the shift of the spectral position of the resonance peak can be used for sensor applications, e.g., for determination of very low concentrations of nanosized dielectric particles in distilled water.
Amorphous alumina layers are deposited on a single crystal Si substrate by a e-gun evaporation technique. These films are then thermally annealed in oxygen to be crystallized and, further, irradiated with an excimer laser beam. At each stage of the film preparation, an x-ray photoelectron spectroscopy analysis is performed at the film surface and in depth, upon ion beam grinding. Results give evidence for the formation of an aluminosilicate upon thermal annealing of the film in oxygen. At the surface itself, this compound is observed to decompose upon excimer laser irradiation at energy densities exceeding 1.75 J/cm2, giving rise to free Si atoms and SiO2, however with complete disappearance of Al atoms. Model photochemical reactions are proposed to explain such transformations.
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