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Nearly ideal diodes have been fabricated using the in situ junctions present in Si-TaSi2 semiconductor-metal eutectic composites. The composites, prepared by directional solidification at the eutectic composition, have a high density of TaSi2 rods in a quasi-single crystalline P-doped, n-type Si matrix. Analysis of the diodes using current-voltage and capacitance-voltage techniques yields a TaSi2/Si Schottky barrier height of 0.62 eV and evidence that the voltage-dependent depletion zones can be made comparable to the interrod spacing to produce a ‘‘pinch-off’’ condition.

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In situ Si-TaSi2 composites are studied by synchrotron white beam topography and by double axis diffractometry. These results show that the single crystal Si matrix is of excellent quality: Rocking curve widths are between 40 and 60 s of arc, and the topographs do not exhibit asterism. Diffuse radial streaks in the Laue patterns originate from diffraction by the TaSi2 rods in the matrix: The K-absorption edge of filters placed in the incident x-ray beam produces a sharp change in contrast in the streaks, and this is used to determine the d spacings present in the streaks and to show that considerable preferred orientation exists between the TaSi2 rods and the Si matrix.