Two-dimensional parallel optical interconnects (2-D-POIs) are capable of providing large connectivity between elements in computing and switching systems. Using this technology we have demonstrated a bidirectional optical interconnect between two printed circuit boards containing optoelectronic (OE) very large scale integration (VLSI) circuits. The OE-VLSI circuits were constructed using vertical cavity surface emitting lasers (VCSELs) and photodiodes (PDs) flip-chip bump-bonded to a 0.35m complementary metal-oxide-semiconductor (CMOS) chip. The CMOS was comprised of 256 laser driver circuits, 256 receiver circuits, and the corresponding buffering and control circuits required to operate the large transceiver array. This is the first system, to our knowledge, to send bidirectional data optically between OE-VLSI chips that have both VCSELs and photodiodes cointegrated on the same substrate.

The electrochemical response of Al alloys containing various concentrations of Mo in solid solution was studied using potentiodynamic polarization. The evolution of the chemical composition of the passive film during exposure to deaerated 0.1N normalKCl was analyzed using x‐ray photoelectron spectroscopy. Exposure of Al‐Mo alloys to the chloride solution results in an increase in the corrosion potential and a decrease in the cathodic Tafel slope. The breakdown potential is also found to increase with higher concentrations of Mo in the alloy. These results correlate with an increase in the amount of Mo in the oxide film during polarization, even though the concentration of Mo in the passive film is well below that in the alloy. This work suggests that the oxidized Mo in the passive film inhibits the nucleation of pits in the alloy by improving the integrity of the passive film.

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