Nearly ideal diodes have been fabricated using the in situ junctions present in Si-TaSi2 semiconductor-metal eutectic composites. The composites, prepared by directional solidification at the eutectic composition, have a high density of TaSi2 rods in a quasi-single crystalline P-doped, n-type Si matrix. Analysis of the diodes using current-voltage and capacitance-voltage techniques yields a TaSi2/Si Schottky barrier height of 0.62 eV and evidence that the voltage-dependent depletion zones can be made comparable to the interrod spacing to produce a ‘‘pinch-off’’ condition.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.