Microstructure of Czochralski-grown Si-TaSi2 eutectic composites

Microstructure and properties of Si-TaSi2 eutectic in situ composite for field emission

“…Therefore the temperature gradient of EBFZM equipment is much higher than that of CZ furnace, and the higher temperature gradient maybe another factor to fine the solidification microstructure. As far as the Si-TaSi 2 eutectic in situ composite is concerned, Ditchek et al [10] found that the inter-rod spacing is probably the most important parameter to affect its field emission properties, and hence the refinement of the solidification microstructure can help improve the field emission properties of the Si-TaSi 2 eutectic in situ composite. The field emission properties of the Si-TaSi 2 composite prepared by two kinds of crystal growth techniques are tested as well.…”

“…However, previous researches [10,11] demonstrated that this method has some shortages, e.g. the fibers are not distributed uniformly along with the radius because of the forced convection and the local temperature fluctuation resulting from the rates used for seed and crucible rotation; microstructure characteristic of the Si-TaSi 2 eutectic field emission materials at different solidification rates is not explicit; the inter-rod spacing of the TaSi 2 fibers cannot be adjusted on account of the restriction of relatively low growth rate.…”

Microstructure characteristics and interface morphology evolvement of Si-TaSi2 eutectic in situ composite for field emission

“…However, previous researches [9,12] demonstrate that this method has some shortages as following: the fibers are not distributed uniformly along with the radius because of the forced convection and the local temperature fluctuation, which resulted from the rates used for seed and crucible rotation, microstructure characteristic of Si-TaSi 2 eutectic field emission materials at different solidification rates is not explicit and the inter-rod spacing of TaSi 2 fibers can not be adjusted on account of the restriction of relatively low growth rate. It is reported that Si-TaSi 2 eutectic is one of the semiconductor metal eutectics (SME) and the inter-rod spacing may be the most important factor to affect its field emission properties [9]. Therefore, TaSi 2 fibers should be fined enough and the inter-rod spacing should be decreased greatly.…”

“…Ditchek [8,9]studied the Czochralski-grown semiconductor-based eutectic for electronic applications in late 1980s. Kirkpatrick [10,11] reported the vacuum field emission from the Si-TaSi 2 SME composite and patented its application to the xerography such as printer, scanner and copier in 1999.…”

Microstructure and property of Czochralski-grown Si–TaSi2 eutectic in situ composite for field emission

“…After Helbren and Hiscocks [2] prepared the silicon-based eutectic by the unidirectional solidification in 1973, Ditchek studied the Czochralskigrown semiconductor-based eutectic for electronic applications in late 1980s [4,5]. Kirkpatrick [6,7] reported the vacuum field emission from the Si-TaSi 2 SME composite and patented its application to the xerography such as printer, scanner and copier in 1999.…”