Millimeter-wave monolithic GaAs FET amplifiers have been developed. These amplifiers were fabricated using FET's with MBEgrown active layers and electron-beam defined sub-half-micrometer gates. Source groundings are provided through very low inductance via boles. The single-stage amplifier has achieved over a 10-dB gain at 44 GHz. A 300-pm gate-width amplifier has achieved an output power of 60 mW with a power density of 0.2 W per millimeter of gate width.
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