0.5 W 2–21 GHz monolithic GaAs distributed amplifier

Kim, B.; Tserng, H.Q.

doi:10.1049/el:19840197

Cited by 24 publications

(3 citation statements)

References 2 publications

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“…Another new circuit concept which significantly improves the power-handling capability of a travelling-wave amplifier is to couple the active devices to the input gate line through discrete series capacitors (Kim andTserng 1984, Ayasli et al 1984 b). Combined with the gate-source capacitance of the FETs, these capacitors act as voltage dividers, allowing us to sample a desired portion of the input signal from the gate line.…”

Section: Power Amplificationmentioning

confidence: 99%

An overview of monolithic GaAs MESFET travelling-wave amplifiers

Ayasli

1985

International Journal of Electronics

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Section: Power Amplificationmentioning

confidence: 99%

An overview of monolithic GaAs MESFET travelling-wave amplifiers

Ayasli

1985

International Journal of Electronics

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“…To achieve wide bandwidth, the traveling-wave amplifiers approach is a very popular technique [2][3][4], but too many devices used in circuit result in high cost, large size and low efficiency. For a singledevice power amplifier, Class E [5], continuous Class F [6,7], Class J [8] can achieve high efficiency over a wide band, while mostly the circuits design begins from packaged GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

A 2-4 GHZ Octave Bandwidth Gan Hemt Power Amplifier With High Efficiency

Guo¹,

Chen²,

Hao-quan³

et al. 2016

PIER Letters

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Abstract-In this paper, a broadband power amplifier with high efficiency and output power based on GaN HEMT is presented. The design of broadband matching network and transistor package modeling is presented, and a simulation strategy is proposed to increase the simulation accuracy. According to measured results, the PA module shows a linear gain of 10∼13 dB during 1.9-4 GHz. The efficiency can reach 74.5%, and the maximum output power reaches 33.2 Watt. For a 5-MHz WCDMA signal, the designed power amplifier achieves an average output power above 20 W when ACLR = −30 dBc over the entire working band.

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“…However, recent improvements in GaAs FET technology have permitted new prospects in high frequencies. In NIMIC technology, many teams have realized distributed amplifier covering 2-20 GHz bandwidth (1), (2), (3), (4), and in HMIC technology, Niclas et al (5) have made a distributed amplifier on quartz substrate with respectable gain performance in the 2 to 20 GHz frequency band. Up-to-now, no experimental results have been carried out concerning distributed amplifiers on alumina substrate in the DC to K-band frequency range.…”

Section: Introductionmentioning

confidence: 99%