44-GHz monolithic GaAs FET amplifier

Kim, B.; Tserng, H.Q.; Shih, H. D.

doi:10.1109/edl.1986.26306

Cited by 15 publications

(3 citation statements)

References 7 publications

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“…In 1986, Kim et al presented the first millimeter-wave MMIC PAs at 44 GHz: a single stage amplifier with 10 dB gain and a parallel-combined topology with over 17 dBm saturated power and a power density of 23 dBm/mm adopting 300 nm GaAs FETs [90].…”

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

129

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

129

View full text Add to dashboard Cite

show abstract

“…The general corporate combiner power amplifier topology is shown in Figure 14. In 1986, B. Kim et al proposed the first monolithic microwave integrated circuit (MMIC) PA on 44 GHz [73]. The output power of 17.8 dBm and the power density of 0.2 W/mm were achieved by using the parallel combination of single-ended transistors with a gain of over 10 dB.…”

Section: Corporate Combinermentioning

confidence: 99%

Review of Ka-Band Power Amplifier

Wang

et al. 2022

Electronics

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With the increase in the demand for high-speed transmission communication, satellite communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is considered the mainstream frequency band of satellite communication. The performance of a power amplifier (PA) directly affects the power of the transmitter, so the application of a power amplifier in Ka-band satellite communication is very important. A review of the state-of-the-art PA in the Ka band is presented in this article. The structure of the PA introduced includes common source, cascode, stacked field-effect transistor (FET), power combining, and Doherty PA, highlighting the advantages and disadvantages. The main solid-state technologies are outlined, including Si, SiGe, GaAs, and GaN, emphasizing Si complementary metal–oxide–semiconductor (CMOS) due to low price and high integration.

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“…A titre d'exemple la valeur du courant de saturation pour un transistor MIS-like-FET de 0,5 )Jbm de longueur de grille est de 650 mA/mm [68]. De plus, 1 W/mm de densité de puissance a été obtenu à 18,5 GHz [67]. Il n'est pas utopique de penser que de telles performances puissent être étendues à 30 GHz.…”

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Perspectives de forte puissance à l'état solide en ondes millimétriques

Lippens

Friscourt

Rolland

et al. 1987

Rev. Phys. Appl. (Paris)

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Le formidable effort fait actuellement dans les laboratoires sur les composants de type tripôle pose la question du choix d'un composant pour la génération de puissance en ondes millimétriques, actuellement dominée par les dipôles à résistance négative. Dans cet article, nous essayons de répondre à cette question en considérant les composants à effet de champ (MESFET et TEGFET) bipolaire à hétérojonction (HBT), à transfert électronique (diode GUNN) et à ionisation par choc (diodes IMPATT). Nous montrons que dans le bas de la bande millimétrique les performances des composants tripôles en amplificateur de puissance tendent de plus en plus à être comparables à celles obtenues pour les composants dipôles en régime d'oscillation (typiquement 1 W à 30 GHz). Par contre pour des fréquences de l'ordre et supérieures à 100 GHz les composants dipôles se révèlent les plus puissants

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44-GHz monolithic GaAs FET amplifier

Cited by 15 publications

References 7 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Review of Ka-Band Power Amplifier

Perspectives de forte puissance à l'état solide en ondes millimétriques

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