No abstract

Improving costs and scale reflect looming opportunities

Over the past decade, the global cumulative installed photovoltaic (PV) capacity has grown exponentially, reaching 591 GW in 2019. Rapid progress was driven in large part by improvements in solar cell and module efficiencies, reduction in manufacturing costs and the realization of levelized costs of electricity that are now generally less than other energy sources and approaching similar costs with storage included. Given this success, it is a particularly fitting time to assess the state of the photovoltaics field and the technology milestones that must be achieved to maximize future impact and forward momentum. This roadmap outlines the critical areas of development in all of the major PV conversion technologies, advances needed to enable terawatt-scale PV installation, and cross-cutting topics on reliability, characterization, and applications. Each perspective provides a status update, summarizes the limiting immediate and long-term technical challenges and highlights breakthroughs that are needed to address them. In total, this roadmap is intended to guide researchers, funding agencies and industry in identifying the areas of development that will have the most impact on PV technology in the upcoming years.

No abstract

Migration-enhanced epitaxy (MEE) has been successfully employed to grow epitaxial films of the ternary compound CuInSe2 on (001) GaAs that exhibit distinct coexisting domains of both a nonequilibrium crystallographic structure characterized by CuAu (CA) cation ordering, and the compound’s equilibrium chalcopyrite structure. X-ray diffraction, transmission electron diffraction, and Raman scattering data provide evidence for this structural polytype. Distinctive signatures of the CA polytype are found in the data from each of these methods, and their analyses are consistent with assignment of this crystallographic structure to the P4̄m2 space group. This structure is found to preferentially segregate into domains that constitute a distinct metastable phase, which may be stabilized by surface kinetic effects favored by the MEE growth process.

No abstract

The microstructure and chemistry of CuInSe2 single-crystals and Cu(In,Ga)Se2 thin films from high-efficiency devices are investigated by transmission electron microscopy and x-ray energy-dispersive spectroscopy. We find strong chemical fluctuations at the nanoscale, which result in a lattice comprising a mixture of relatively Cu-poor and Cu-rich nanodomains in both cases. These nanodomains are crystallographically coherent, and no structural lattice defects are found at the interfaces between them. These nanodomains may interconnect, forming three-dimensional, interpenetrating Cu-poor and Cu-rich percolation networks. Such interconnected structures may play a role in the high device performance of Cu(In,Ga)Se2 thin-film photovoltaics.

We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in multiple laboratories. This collection of samples exhibits a wide variation of morphologies, compositions, and solar power conversion efficiencies. An extensive characterization of transport properties is reported here -including those derived from capacitance-voltage, admittance spectroscopy, deep level transient spectroscopy, time-resolved photoluminescence, Auger emission profiling, Hall effect, and drive level capacitance profiling. Data from each technique were examined for correlation with device performance, and those providing indicators of related properties were compared to determine which techniques and interpretations provide credible values for transport properties. Although these transport properties are not sufficient to predict all aspects of current-voltage characteristics, we have identified specific physical and transport characterization methods that can be combined using a model-based analysis algorithm to provide a quantitative prediction of voltage loss within the absorber. The approach has potential as a tool to optimize and understand device performance irrespective of the specific